MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
FM200TU-3A
●
I
D(rms) ..........................................................
100A
●
V
DSS .............................................................
150V
●
Insulated
Type
●
6-elements in a pack
●
NTC Thermistor inside
●
UL Recognized
Yellow Card No.E80276
File No.E80271
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM
110
97
±0.25
70.9
32
10
30
7
(6)
(17.5)
N
P
Dimensions in mm
6.5
15.2
16.5
10
16
36
16
36
35
±1.0
30
6.5
26
＋1.0
−0.5
7
(6)
(14.5)
22.75
(15.8)
3 6.5
7
14
22.57
4
11.5
9.1
1
13
3
(8.7)
4-φ6.5
MOUNTING HOLES
(14.5)
12
6
(6)
U
V
W
7-M6NUTS
16.5
A
14
20
32
14
20
32
B
14
20
14
(SCREWING DEPTH)
25
Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
CIRCUIT DIAGRAM
P
(7)G
U
P
(1)S
U
P
U
(10)G
U
N
(4)S
U
N
N
(8)G
V
P
(2)S
V
P
V
(11)G
V
N
(5)S
V
N
(9)G
W
P
(3)S
W
P
W
(12)G
W
N
(6)S
W
N
(14)
(13)
NTC
(1)S
U
P
(7)G
U
P
(2)S
V
P
(8)G
V
P
4
(3)S
W
P
(4)S
U
N
(5)S
V
N
L A B E L
9.2
5-6.5
38
67
±0.25
3.96
75
80
90
(6)S
W
N
(9)G
W
P (10)G
U
N (11)G
V
N (12)G
W
N
A
B
(13)TH1 (14)TH2
Feb.
2009
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
ch
= 25°C unless otherwise specified.)
Symbol
V
DSS
V
GSS
I
D(rms)
I
DM
I
DA
I
S(rms)
*
1
I
SM
*
1
P
D
*
4
P
D
*
4
T
ch
T
stg
V
iso
—
—
Item
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
G-S Short
D-S Short
T
C
’ = 122°C*
3
Pulse*
2
L = 10µH Pulse*
2
Pulse*
2
T
C
= 25°C
T
C
’ = 25°C*
3
Ratings
150
±20
100
200
100
100
200
410
560
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Unit
V
V
A
rms
A
A
A
rms
A
W
W
°C
°C
V
rms
N•m
N•m
g
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
ELECTRICAL CHARACTERISTICS
(T
ch
= 25°C unless otherwise specified.)
Symbol
I
DSS
V
GS(th)
I
GSS
r
DS(ON)
(chip)
V
DS(ON)
(chip)
R
(lead)
C
iss
C
oss
C
rss
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
*
1
Q
rr
*
1
V
SD
*
1
R
th(ch-c)
R
th(ch-c’)
R
th(c-f)
R
th(c’-f’)
Item
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
V
DS
= V
DSS
, V
GS
= 0V
I
D
= 10mA, V
DS
= 10V
V
GS
= V
GSS
, V
DS
= 0V
I
D
= 100A
V
GS
= 15V
I
D
= 100A
V
GS
= 15V
I
D
= 100A
terminal-chip
V
DS
= 10V
V
GS
= 0V
V
DD
= 80V, I
D
= 100A, V
GS
= 15
V
DD
= 80V, I
D
= 100A, V
GS
±
15V
R
G
= 13Ω, Inductive load
I
S
= 100A
Conditions
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
4.8
9.1
0.48
0.91
1.2
1.68
—
—
—
820
—
—
—
—
—
6.5
—
—
—
0.1
0.09
Max.
1
7.3
1.5
6.6
—
0.66
—
—
—
50
7
4
—
400
250
450
200
200
—
1.3
0.30
0.22
—
—
Unit
mA
V
µA
mΩ
V
mΩ
T
ch
= 25°C
T
ch
= 125°C
T
ch
= 25°C
T
ch
= 125°C
T
ch
= 25°C
T
ch
= 125°C
nF
nC
ns
I
S
= 100A, V
GS
= 0V
MOSFET part (1/6 module)*
7
MOSFET part (1/6 module)*
3
Case to heat sink, Thermal grease Applied*
8
(1/6 module)
Case to heat sink, Thermal grease Applied*
3,
*
8
(1/6 module)
ns
µC
V
K/W
NTC THERMISTOR PART
Symbol
R
Th
*
6
B*
6
Parameter
Resistance
B Constant
Conditions
T
Th
= 25°C*
5
Resistance at T
Th
= 25°C, 50°C*
5
Min.
—
—
Limits
Typ.
100
4000
Max.
—
—
Unit
kΩ
K
*
1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi).
*
2: Pulse width and repetition rate should be such that the device channel temperature (T
ch
) does not exceed T
ch
max rating.
*
3: Case Temperature (Tc’) measured point is just under the chips. If use this value, R
th(f-a)
should be measured just under the chips.
*
4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
5: T
Th
is thermistor temperature.
*
6:
B = In( R
25
)/( T1 T1 )
R
50
25
50
R
25
: resistance at absolute temperature T
25
[K]: T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]: T
50
= 50 [°C]+273.15 = 323.15 [K]
*
7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*
8: Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Feb.
2009
2
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
GATE-SOURCE VOLTAGE V
GS
(V)
I
D
= 100A
SOURCE CURRENT I
S
(A)
10
3
7
5
3
2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
Chip
(TYPICAL)
V
GS
= 0V
16
V
DD
= 60V
V
DD
= 80V
T
ch
= 125°C
T
ch
= 25°C
12
10
2
7
5
3
2
8
4
0
0
200
400
600
800
1000 1200
10
1
0.5
0.6
0.7
0.8
0.9
1.0
GATE CHARGE Q
G
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
10
3
7
5
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
4
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
d(on)
t
r
t
f
Conditions:
V
DD
= 80V
V
GS
=
±15V
I
D
= 100A
T
ch
= 125°C
Inductive load
80 100 120 140
SWITCHING TIME (ns)
3
2
t
d(on)
t
r
SWITCHING TIME (ns)
t
d(off)
10
3
7
5
3
2
10
2
7
5
3
2
t
f
10
1 1
10
Conditions:
V
DD
= 80V
V
GS
=
±15V
R
G
= 13Ω
T
ch
= 125°C
Inductive load
2
3
5 7
10
3
10
2
7
5
3
2
2
3
5 7
10
2
10
1
0
20
40
60
DRAIN CURRENT I
D
(A)
GATE RESISTANCE R
G
(Ω)
10
1
SWITCHING LOSS (mJ/pulse)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
1
SWITCHING LOSS (mJ/pulse)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
E
on
E
off
Conditions:
V
DD
= 80V
V
GS
=
±15V
I
D
= 100A
T
ch
= 125°C
Inductive load
10
0
7
5
3
2
10
0
7
5
3
2
E
on
E
rr
Conditions:
V
DD
= 80V
V
GS
=
±15V
R
G
= 13Ω
T
ch
= 125°C
Inductive load
3
5 7
10
2
2
3
5 7
10
3
E
rr
10
–1
7
5
3
2
10
–1
7
5
3
2
E
off
2
10
–2 1
10
10
–2
0
20
40
60
80
100 120 140
DRAIN CURRENT I
D
(A)
GATE RESISTANCE R
G
(Ω)
Feb.
2009
4
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