MCC
Features
l
Through Hole Package
l
150
o
C Junction Temperature
Pin Configuration
Bottom View
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
BC556,B
BC557,A,B,C
BC558,B
PNP Silicon
Amplifier Transistor
C
B
E
625mW
A
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Polarity: indicated as above.
TO-92
E
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
BC556
BC557
BC558
BC556
BC557
BC558
Symbol Value
-65
V
CEO
-45
-30
-80
V
CBO
-50
-30
V
EBO
-5.0
I
C
P
d
P
d
R
q
JA
Unit
V
V
V
mA
mW
mW/
o
C
W
mW/
o
C
o
D
C
Emitter-Base Voltage
Collector Current(DC)
Power Dissipation@T
A
=25
o
C
Power Dissipation@T
C
=25
o
C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
-100
625
5.0
1.5
12
200
83.3
G
DIMENSIONS
C/W
C/W
o
DIM
A
B
C
D
E
G
R
q
JC
o
T
j
, T
STG
-55~150
C
INCHES
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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BC556 thru BC558B
MCC
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
–5.0
–5.0
–5.0
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
V
–65
–45
–30
—
—
—
—
—
—
V
V
Collector – Base Breakdown Voltage
(IC = –100
µAdc)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = –10
µAdc,
VCE = –5.0 V)
hFE
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C
VCE(sat)
—
VBE(sat)
—
VBE(on)
–0.55
—
–0.62
–0.7
–0.7
–0.82
—
—
—
—
120
120
120
120
180
420
—
—
—
90
150
270
—
—
—
170
290
500
120
180
300
---
—
—
—
500
800
800
220
460
800
—
—
—
V
–0.3
V
–1.0
V
—
(IC = –2.0 mAdc, VCE = –5.0 V)
(IC = –100 mAdc, VCE = –5.0 V)
Collector – Emitter Saturation Voltage
(IC = –100mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Cob
—
—
—
—
280
320
360
3.0
—
—
—
6.0
pF
MHz
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz)
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BC556 thru BC558B
BC557/BC558
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
VCE = –10 V
TA = 25°C
V, VOLTAGE (VOLTS)
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
–100 –200
0
–0.1 –0.2
TA = 25°C
MCC
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
0.3
VCE(sat) @ IC/IB = 10
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50
–100
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
–2.0
VCE , COLLECTOR–EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
TA = 25°C
–1.6
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–1.2
IC =
–10 mA
IC = –50 mA
IC = –20 mA
IC = –200 mA
IC = –100 mA
–0.8
–0.4
0
–0.02
–0.1
–1.0
IB, BASE CURRENT (mA)
–10 –20
–0.2
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 3. Collector Saturation Region
f T CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
,
Figure 4. Base–Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
Cob
Cib
TA = 25°C
400
300
200
150
100
80
60
40
30
20
–0.5
VCE = –10 V
TA = 25°C
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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BC556 thru BC558B
BC556
–1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = –5.0 V
TA = 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
MCC
–0.2
0.2
0
–0.2
VCE(sat) @ IC/IB = 10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.5
–50 –100 –200
–1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
–1.0
–1.6
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–1.4
–1.2
–1.8
θ
VB for VBE
–55°C to 125°C
–0.8
–2.2
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
–20
–2.6
–3.0
–0.2
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f T CURRENT–GAIN – BANDWIDTH PRODUCT
,
40
TJ = 25°C
C, CAPACITANCE (pF)
20
Cib
500
VCE = –5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
–0.1 –0.2
Cob
20
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–50 –100
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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