The UT54ACS14E is a hex inverter with schmitt trigger inputs.
The circuits perform the Boolean function Y = A.
The devices are characterized over full military temperature
range of -55°C to +125°C.
•
0.6µm
CRH CMOS Process
•
•
Low power consumption
•
Wide operating power supply from 3.0V to 5.5V
•
Available QML Q or V processes
- Latchup immune
High speed
•
14-lead flatpack
PINOUTS
14-Lead Flatpack
Top View
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
A6
Y6
A5
Y5
A4
Y4
FUNCTION TABLE
INPUT
A
H
L
OUTPUT
Y
L
H
LOGIC DIAGRAM
A1
Y1
LOGIC SYMBOL
A1
A2
A3
A4
A5
A6
(1)
(3)
(5)
(9)
(11)
(13)
1
A2
(2)
(4)
(6)
(8)
(10)
(12)
Y1
Y2
Y3
Y4
Y5
Y6
A5
Y5
A4
Y4
A3
Y3
Y2
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
A6
Y6
1
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+ .3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to +125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS14E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
T+
Description
Schmitt trigger positive-going
threshold
1
Schmitt trigger negative-going
threshold
1
Hysteresis
2
(V
T+
- V
T-
)
I
IN
V
OL
Input leakage current
Low-level output voltage
3
High-level output voltage
3
Short-circuit output current
2 ,4
V
IN
= V
DD
or V
SS
I
OL
= 100µA
CONDITION
VDD
3.0V
5.5V
3.0V
5.5V
3.0V
4.5V
5.5V
3.0V
4.5V
V
OH
I
OH
= -100µA
3.0V
4.5V
I
OS
V
O
= V
DD
and V
SS
3.0V
5.5V
I
OL
Low level output current
9
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
I
OH
High level output current
9
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
P
total
I
DDQ
C
IN
C
OUT
Power dissipation
2, 8
Quiescent Supply Current
Input capacitance
5
Output capacitance
5
C
L
= 50pF
V
IN
= V
DD
or V
SS
ƒ
= 1MHz
ƒ
= 1MHz
3.0V
5.5V
3.0V
5.5V
5.5V
3.0V
5.5V
0V
0V
2.75
4.25
-100
-200
6
8
-6
-8
1.9
0.76
10
15
15
mW/
MHz
µA
pF
pF
mA
100
200
mA
mA
0.9
1.65
0.3
.6
-1
1.2
1.5
1
0.25
0.25
V
µA
V
V
MIN
MAX
2.1
3.85
V
UNIT
V
V
T-
V
H
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, - 50%,
as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed
to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
8. Power dissipation specified per switching output.
9. This value is guaranteed based on characterization data, but not tested.
3
AC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS14E
2
(V
DD
= 3.0V to 5.5V; V
SS
= 0V
1
, -55°C < T
C
< +125°C)
SYMBOL
t
PHL
PARAMETER
Input to Yn
Condition
C
L
= 30pF
V
DD
3.0V & 3.6V
4.5V & 5.5V
C
L
= 50pF
3.0V & 3.6V
4.5V & 5.5V
t
PLH
Input to Yn
C
L
= 30pF
3.0V & 3.6V
4.5V & 5.5V
C
L
= 50pF
3.0V & 3.6V
4.5V & 5.5V
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
卡巴斯基的安全研究人员称其发现了如何攻击Intel微处理器的远程攻击代码，据传，这一代码可以通过TCP/IP包和JavaScript代码到达用户系统。 目前受影响的系统包括Windows XP，Vista，Windows Server 2003，Windows Server 2008，Linux甚至是BSD和Mac。但所幸大多数错误可以由Intel和BIOS厂商联合进行修复。 卡...[详细]
为我们提建议&公告
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
