REVISIONS
LTR
A
B
C
D
DESCRIPTION
Add device type 02. Add I
OH
and I
OL
tests. Add Schmitt trigger threshold tests
for device type 02. Change table IB. Editorial changes throughout. - JAK
Changes in accordance with NOR 5962-R259-97. - CFS
Add die appendix. Update boilerplate. - CFS
Add limit for linear energy threshold (LET) with no latch-up in section 1.5.
Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes
throughout. - TVN
DATE (
YR-MO-DA
)
96-11-19
97-04-22
00-07-12
07-04-25
APPROVED
Monica L. Poelking
Monica L. Poelking
Monica L. Poelking
Thomas M. Hess
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
D
15
D
16
D
17
D
18
REV
SHEET
D
19
D
20
D
21
D
1
D
22
D
2
D
23
D
3
D
24
D
4
D
25
D
5
D
26
D
6
D
7
D
8
D
9
C
10
C
11
C
12
D
13
D
14
PREPARED BY
Larry T. Gauder
CHECKED BY
Thanh V. Nguyen
APPROVED BY
Monica L. Poelking
DRAWING APPROVAL DATE
96-05-30
REVISION LEVEL
SIZE
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
MICROCIRCUIT, DIGITAL, RADIATION HARDENED,
ADVANCED CMOS, OCTAL BUS TRANSCEIVER WITH
THREE-STATE OUTPUTS, MONOLITHIC SILICON
CAGE CODE
AMSC N/A
D
A
SHEET
1
67268
OF
26
5962-96572
DSCC FORM 2233
APR 97
5962-E181-07
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
H
96572
01
V
X
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
\/
Drawing number
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
54ACS245
54ACS245S
Circuit function
Radiation hardened, octal bus transceiver with
three-state outputs
Radiation hardened, Schmitt octal bus transceiver with
three-state outputs
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
R
X
Descriptive designator
GDIP1-T20 or CDIP2-T20
CDFP4-F20
Terminals
20
20
Package style
Dual-in-line
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96572
SHEET
D
2
1.3 Absolute maximum ratings.
1/ 2/ 3/
Supply voltage range (V
DD
) .................................................................................. -0.3 V dc to +7.0 V dc
DC input voltage range (V
IN
) ................................................................................ -0.3 V dc to V
DD
+ 0.3 V dc
DC output voltage range (V
OUT
) ........................................................................... -0.3 V dc to V
DD
+ 0.3 V dc
DC input current, any one input (I
IN
).....................................................................
±10
mA
Latch-up immunity current (I
LU
) ............................................................................
±150
mA
Storage temperature range (T
STG
) ....................................................................... -65°C to +150°C
Lead temperature (soldering, 5 seconds)............................................................. +300°C
Thermal resistance, junction-to-case (θ
JC
) ........................................................... See MIL-STD-1835
Junction temperature (T
J
) .................................................................................... +175°C
Maximum power dissipation (P
D
) ......................................................................... 1.0 W
1.4 Recommended operating conditions.
2/ 3/
Supply voltage range (V
DD
) .................................................................................. +4.5 V dc to +5.5 V dc
Input voltage range (V
IN
) ...................................................................................... 0.0 V dc to V
DD
Output voltage range (V
OUT
)................................................................................. 0.0 V dc to V
DD
Maximum input rise or fall time at V
DD
= 4.5 V (t
r
, t
f
) ............................................ 1 ns/V 4/
Case operating temperature range (T
C
) ............................................................... -55°C to +125°C
1.5 Radiation features.
5/
Total dose ............................................................................................................
>
1 x 10
6
Rads (Si)
Single event phenomenon (SEP) effective:
2
Linear energy threshold (LET), no upsets (see 4.4.4.4)...................................
>
80 MeV/(mg/cm ) 6/
2
Linear energy threshold (LET), no latch-up (see 4.4.4.4).................................
>
120 MeV/(mg/cm ) 6/
9
Dose rate upset (20 ns pulse) ..............................................................................
>
1 x 10 Rads (Si)/s 6/
Latch-up............................................................................................................... None
12
Dose rate survivability..........................................................................................
>
1 x 10 Rads (Si)/s 6/
1/
2/
3/
4/
5/
6/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Unless otherwise specified, all voltages are referenced to V
SS
.
The limits for the parameters specified herein shall apply over the full specified V
DD
range and case temperature range
of -55°C to +125°C unless otherwise specified.
Derate system propagation delays by difference in rise time to switch point for t
r
or t
f
>
1 ns/V.
Radiation testing is performed on the standard evaluation circuit.
Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase
order or contract.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96572
SHEET
D
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
-
-
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103
MIL-HDBK-780
-
-
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from
the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)
ASTM F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of Semiconductor Devices.
(Copies of these documents are available online at http://www.astm.org or from: ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA 19428-2959.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.2.4 Logic diagrams. The logic diagrams shall be as specified on figure 3.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96572
SHEET
D
4
3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4.
3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the
full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and
herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 37 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-96572
SHEET
D
5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
