• Wide operating power supply range of 3.0V to 5.5V
• Available QML Q or V processes
• 14-lead flatpack
PINOUT
14-Pin Flatpack
Top View
A1
B1
Y1
A2
B2
Y2
V
SS
OUTPUT
B
H
X
L
Y
H
L
L
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
B4
A4
Y4
B3
A3
Y3
FUNCTION TABLE
INPUT
A
H
L
X
LOGIC DIAGRAM
LOGIC SYMBOL
A1
B1
A2
B2
A3
B3
A4
B4
(1)
(2)
(4)
(5)
(9)
(10)
(12)
(13)
(11)
&
(3)
(6)
(8)
Y1
Y2
Y3
Y4
A1
B1
A2
B2
A3
B3
A4
B4
Y4
Y3
Y1
Y2
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
DESCRIPTION
The UT54ACTS08E is a quadruple two-input AND gate. The
circuit performs the Boolean functions Y= A
⋅
B or
Y= A+B
in positive logic.
The devices are characterized over full military temperature
range of -55°C to +125°C.
1
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to +125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACTS08E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
IL
Description
Low-level input voltage
1
High-level input voltage
1
Input leakage current
Low-level output voltage
3
CONDITION
VDD
3.0V
5.5V
MIN
MAX
0.8
0.8
UNIT
V
V
IH
3.0V
5.5V
2.0
2.75
-1
1
0.4
0.4
2.4
3.15
-100
-200
6
8
-6
-8
1.8
10
1.6
100
200
V
µA
V
V
V
V
mA
I
IN
V
OL
V
IN
= V
DD
or V
SS
I
OL
= 6mA
I
OL
= 8mA
5.5V
3.0V
4.5V
3.0V
4.5V
3.0V
5.5V
V
OH
High-level output voltage
3
I
OH
= -6mA
I
OH
= -8mA
I
OS
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
I
OL
Low level output current
10
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
3.0V
5.5V
3.0V
5.5V
5.5V
5.5V
5.5V
mA
I
OH
High level output current
10
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
mA
P
total
I
DDQ
∆I
DDQ
Power dissipation
2, 8, ,9
Quiescent Supply Current
Quiescent Supply Current Delta
C
L
= 50pF
V
IN
= V
DD
or V
SS
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
ƒ
= 1MHz
ƒ
= 1MHz
mW/
MHz
µA
mA
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
0V
0V
15
15
pF
pF
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, - 50%,
as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed
to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
8. Power does not include power contribution of any TTL output sink current
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
3
AC ELECTRICAL CHARACTERISTICS FOR THE UT54ACTS08E
2
(V
DD
= 3.0V to 5.5V; V
SS
= 0V
1
, -55°C < T
C
< +125°C)
SYMBOL
t
PLH
PARAMETER
Input to Yn
C
L
= 30pF
V
DD
3.0V & 3.6V
4.5V & 5.5V
C
L
= 50pF
3.0V & 3.6V
4.5V & 5.5V
t
PHL
Input to Yn
C
L
= 30pF
3.0V & 3.6V
4.5V & 5.5V
C
L
= 50pF
3.0V & 3.6V
4.5V & 5.5V
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
主题：自备终端(BYOD)发展趋势;用员工自己的移动设备来控制对工作设施及设备的使用，会对信息安全产生怎样的影响;在不使公司有安全风险或不损害员工隐私的前提下，有哪些方式能安全地实现这样的设施及设备使用。 自备终端(Bring Your Own Device，简称BYOD)，即企业允许员工离职时保留自己的手机，这种做法正日益流行。如今智能手机功能也越来越多，我们不仅能用自己的手机访问电脑、网...[详细]
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
