GB-IR333 SERIES
Infrared Emitting Diodes
(5mm)
DESCRIPTION:
The IR333 series is high power solution infrared emitting diodes encapsulated in blue
transparent or water clear plastic package.
These products have high radiant intensity and are suitable for pulsed applications.
PACKAGE DIMENSIONS
Unit: mm
Tol: +/- 0.2mm
5.9
φ5.0
ABSOLUTE MAXIMUM RATINGS: (Ta=25 C)
Max
Parameter
5 Volt
Reverse Voltage
100µA
Reverse Current (Vr =5V)
35mA
Continuous Forward Current
100mA
Peak Forward Current (1-10 Duty Cycle, 0.1ms Pulse Width)
-40
o
C To +85
o
C
Operating Temperature Range
o
o
-55 C To +100 C
Storage Temperature Range
o
Lead Soldering Temperature 1.6mm(.06") from body 260 C for 5 seconds
NOTES : 1. All dimensions are in millimeters.
2. Lead spacing is measured where the leads emerge from the package.
3. Protuded resin under flange is 1.5 mm (0.059") Max.
4. Specifications are subject to change without notice.
1.0 Max.
1.0
o
8.6
25.4 Min.
0.5
1.0
2.54
PART NO. SELECTION AND APPLICATION INFORMATION (RATINGS AT 25 C AMBIENT)
Chips
Part No.
Raw
Material
AlGaAs
AlGaAs
AlGaAs
AlGaAs
AlGaAs
AlGaAs
AlGaAs
AlGaAs
AlGaAs
Lens
Color
Peak
Spectral
Wave
Line
Power
Length Half-Width Dissipation
λp
(nm)
∆λ
(nm)
P
D
(mW)
940
940
940
880
880
880
850
850
850
60
60
60
70
70
70
60
60
60
95
95
95
95
95
95
95
95
95
Forward
Voltage
Vf (v)
Min Max
1.2
1.2
1.2
1.3
1.3
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.6
1.6
1.6
1.8
1.8
1.8
20
20
20
20
20
20
20
20
20
Terminal
Radiant
Rec. Capacitance Intensity
C
t
(pF)
If (mA).
Ie (mW/Sr)
Typ.
20
20
20
20
20
20
20
20
20
Min
15.0
10.0
4.0
17.7
11.8
5.0
15
10.0
5.0
Typ.
30.0
20.0
9.0
30.8
20.5
10.0
37.5
25.0
12.0
Typical
Viewing
Angle
2θ
1/2
(Deg)
20
30
50
20
30
50
20
30
50
o
GB-IR333A21C
GB-IR333A21BT
GB-IR333A31C
GB-IR333A31BT
GB-IR333A51C
GB-IR333A51BT
GB-IR333B21C
GB-IR333B21BT
GB-IR333B31C
GB-IR333B31BT
GB-IR333B51C
GB-IR333B51BT
GB-IR333C21C
GB-IR333C21BT
GB-IR333C31C
GB-IR333C31BT
GB-IR333C51C
GB-IR333C51BT
(W.C. = Water Clear)
(B.T. = Blue Transparent)
W.C.
B.T.
W.C.
B.T.
W.C.
B.T.
W.C.
B.T.
W.C.
B.T.
W.C.
B.T.
W.C.
B.T.
W.C.
B.T.
W.C.
B.T.
TESTING CONDITION FOR EACH PARAMETER :
Parameter
Forward Voltage
Peak Emission Wave Length
Spectral Line Half-Width
Reverse Current
Radiant Intensity
Terminal Capacitance
View Angle
Symbol
Vf
λρ
∆λ
Ir
Ie
C
t
2θ
1/2
Unit
V
nm
nm
mA
mW/Sr
pF
Deg
0.5
0.3
0.1
0
o
10
o
20
o
30
o
Test Condition
If=20mA
If=20mA
If=20mA
Vr=5V
If=20mA
f=1MHz
1.0
0.9
0.8
40
o
50
o
60
o
0.7
70
o
80
o
90
o
0.2
0.4
0.6
SPATIAL DISTRIBUTION
Microchip MCU
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