GB-PT333 SERIES
Phototransistor
(5mm)
DESCRIPTION:
The PT333 series consists of a NPN silicon phototransistor encapsulated in blue
transparent, dark blue or water clear plastic package.
The dark blue plastic package which cuts the visible light is suitable for the detection
of infrared application.
φ5.0
PACKAGE DIMENSIONS
Unit: mm
Tol: +/- 0.2mm
5.9
ABSOLUTE MAXIMUM RATINGS: (Ta=25 C)
Max
Parameter
100mW
Power Dissipation
30V
Collector-Emitter Voltage
5V
Emitter-Collector Voltage
20mA
Collector Current
-40
o
C To +85
o
C
Operating Temperature Range
-55
o
C To +100
o
C
Storage Temperature Range
o
Lead Soldering Temperature 1.6mm(.06") from body 260 C for 5 seconds
NOTES : 1. All dimensions are in millimeters.
2. Lead spacing is measured where the leads emerge from the package.
3. Protuded resin under flange is 1.5 mm (0.059") Max.
4. Specifications are subject to change without notice.
1.0 Max.
1.0
o
8.6
25.4 Min.
0.5
1.0
2.54
c
b
o
e
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25 C)
Part No.
Lens Color
Wave Length
of Peak
Sensitivity
λp
(nm)
Typ
GB-PT333A21C
GB-PT333A21BT
GB-PT333A21DB
GB-PT333A22C
GB-PT333A22BT
GB-PT333A22DB
GB-PT333B21C
GB-PT333B21BT
GB-PT333B21DB
GB-PT333B22C
GB-PT333B22BT
GB-PT333B22DB
Water Clear
Blue Transparent
Dark Blue
Water Clear
Blue Transparent
Dark Blue
Water Clear
Blue Transparent
Dark Blue
Water Clear
Blue Transparent
Dark Blue
860
400~1200
840~1200
o
Range of
Spectral
Bandwidth
λ
0.5
(nm)
Typ
400~1200
840~1200
Collector-
Emitter
Saturation
Voltage
Max
0.4
Collector
Dark
Current
I
D (
nA)
Max
100
Min
On State
Collector
Current
I
C (on)
Typ
Max
Angular
Response
∆θ(Deg)
Typ
+20
980
0.70 1.30 1.90
0.54 1.00 1.46
980
400~1200
840~1200
0.4
100
1.40 4.00 6.80
1.08 3.08 5.23
+20
860
400~1200
840~1200
0.4
100
0.70 1.30 1.90
0.54 1.00 1.46
+20
0.4
100
0.70 2.00 3.40
0.54 1.54 2.62
+20
TESTING CONDITION FOR EACH PARAMETER (Ta=25 C)
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Dark Current
Rise Time
Fall Time
On State Collector Current
Angular Response
Symbol
V
BR CEO
V
BR ECO
V
CE (SAT)
I
D
T
R
T
F
I
C(ON)
∆θ
Unit
V
V
V
nA
µs
µs
mA
Deg
Test Condition
I
c
=100µA
Ee=0mW/cm
2
I
E
=100µA
Ee=0mW/cm
2
I
C
=0.1mA
H=2.5mW/cm
2
V
CE
=10V
Ee=0m/W/cm
2
V
CC
=5V
I
C
=1mA
RL=100Ω
V
CE
=5V
Ee=1mW/cm
2
λ=940nm
0
o
10
o
20
o
30
o
1.0
0.9
0.8
40
o
50
o
60
o
0.7
70
o
80
o
90
o
0.5
0.3
0.1
0.2
0.4
0.6
SPATIAL DISTRIBUTION
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
