STGB19NC60HD - STGF19NC60HD
STGP19NC60HD - STGW19NC60HD
19 A - 600 V - very fast IGBT
Features
■
■
■
Low on-voltage drop (V
CE(sat)
)
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery anti-parallel diode
3
1
1
3
2
D²PAK
TO-220
Applications
■
■
■
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drives
2
1
3
1
2
3
TO-247
TO-220FP
Description
This IGBT utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
GB19NC60HD
GF19NC60HD
GP19NC60HD
GW19NC60HD
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Order codes
STGB19NC60HDT4
STGF19NC60HD
STGP19NC60HD
STGW19NC60HD
July 2008
Rev 3
1/18
www.st.com
18
Contents
STGB/F/P/W19NC60HD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 7
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STGB/F/P/W19NC60HD
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220
D²PAK
V
CES
I
C(1)
I
C(1)
I
CL (2)
I
CP (3)
I
F
I
FSM
V
GE
P
TOT
T
j
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at
T
C
= 25 °C
Collector current (continuous) at
T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Diode RMS forward current at
T
C
= 25 °C
Surge not repetitive forward current
t
p
=10 ms sinusoidal
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Operating junction temperature
130
40
19
Unit
TO-220FP
600
16
10
40
40
20
50
±20
32
– 55 to 150
140
42
21
TO-247
V
A
A
A
A
A
A
V
W
°C
1. Calculated according to the iterative formula:
T
–
T
JMAX
C
I
(
T
)
= -----------------------------------------------------------------------------------------------------
-
C C
R
×
V
(
T
,
I
)
THJ
–
C
CESAT
(
MAX
)
C C
2. Vclamp=80%V
CES
, T
J
= 150 °C, R
G
=1 0
Ω,
V
GE
= 15 V
3. Pulse width limited by max. temperature allowed
Table 3.
Thermal resistance
Value
Symbol
Parameter
TO-220
D²PAK
Unit
TO-220FP
TO-247
R
thj-case
Thermal resistance junction-case
max. IGBT
Thermal resistance junction-case
max.diode
Thermal resistance junction-
ambient max
0.95
3.0
62.5
3.9
5.5
0.9
3.0
30
°C/W
°C/W
°C/W
R
thj-amb
3/18
Electrical characteristics
STGB/F/P/W19NC60HD
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Collector-emitter
V
BR(CES)
breakdown voltage
(V
GE
= 0)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs (1)
1.
I
C
= 1 mA
600
V
Collector-emitter saturation V
GE
= 15 V, I
C
= 12 A
voltage
V
GE
= 15 V, I
C
=12 A,Tc=125 °C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 600 V
V
CE
= 600 V,T
C
= 125 °C
V
GE
= ±20 V
V
CE
= 15 V
,
I
C
= 12 A
3.75
1.8
1.6
2.5
V
V
V
µA
mA
nA
S
5.75
150
1
±100
5
Pulsed: Pulse duration = 300 ìs, duty cycle 1.5%
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min.
Typ.
1180
130
36
Max.
Unit
pF
pF
pF
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CE
= 390 V, I
C
= 5 A,
V
GE
= 15 V,
Figure 20
53
10
23
nC
nC
nC
4/18
STGB/F/P/W19NC60HD
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r(Voff)
t
d(Voff)
t
f
t
r(Voff)
t
d(Voff)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 390 V, I
C
= 12 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Figure 21
V
CC
= 390 V, I
C
= 12 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Tc = 125 °C
Figure 21
V
CC
= 390 V, I
C
= 12 A
R
G
= 10
Ω
V
GE
= 15 V,
,
Figure 21
V
CC
= 390 V, I
C
= 12 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Tc = 125 °C
Figure 21
Min.
Typ.
25
7
1600
24
8
1400
27
97
73
58
144
128
Max.
Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
Table 7.
Symbol
E
on
E
off(1)
E
ts
E
on
E
off(1)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 390 V, I
C
= 12 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Figure 21
V
CC
= 390 V, I
C
= 12 A
R
G
= 10
Ω
V
GE
= 15 V,
,
Tc = 125 °C
Figure 21
Min.
Typ.
85
189
274
187
407
594
Max.
Unit
µJ
µJ
µJ
µJ
µJ
µJ
1. Turn-off losses include also the tail of the collector current
5/18
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