STGB8NC60KD - STGD8NC60KD
STGF8NC60KD - STGP8NC60KD
600 V - 8 A - short circuit rugged IGBT
Features
■
■
■
■
Lower on voltage drop (V
CE(sat)
)
Lower C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
Short circuit withstand time 10 µs
1
2
3
2
3
1
DPAK
TO-220
2
Applications
■
■
■
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Figure 1.
1
3
2
3
1
TO-220FP
D
²
PAK
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Internal schematic diagram
Table 1.
Device summary
Marking
GB8NC60KD
GD8NC60KD
GF8NC60KD
GP8NC60KD
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
Order codes
STGB8NC60KDT4
STGD8NC60KDT4
STGF8NC60KD
STGP8NC60KD
April 2008
Rev 2
1/18
www.st.com
18
Contents
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 7
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
D²PAK
TO-220
V
CES
I
C(1)
I
C(1)
I
CL(2)
I
CP(3)
V
GE
I
F
I
FSM
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge not repetitive forward current
t
p
= 10 ms sinusoidal
Insulation withstand voltage (RMS) from all
three leads to external hea sink
( t=1 s; T
C
= 25 °C)
Total dissipation at T
C
= 25 °C
Operating junction temperature
Short circuit withstand time
,
(V
CE
= 0.5 V
BR(CES)
, T
C
= 125 °C, R
G
= 10
Ω
V
GE
= 12 V)
T
–
T
JMAX
C
I
(
T
)
= -----------------------------------------------------------------------------------------------------
-
C C
R
×
V
(
T
,
I
)
THJ
–
C
CESAT
(
MAX
)
C C
Unit
DPAK TO-220FP
600
V
7
4
30
30
±20
7
20
A
A
A
A
V
A
A
15
8
V
ISO
P
TOT
T
j
T
scw
--
65
--
62
– 55 to 150
2500
24
V
W
°C
10
µs
1. Calculated according to the iterative formula:
2. V
clamp
= 80% (V
CES
), V
GE
=15 V, R
G
=10
Ω,
T
J
=150 °C
3. Pulse width limited by max junction temperature allowed
Table 3.
Thermal resistance
Value
Symbol
Parameter
D²PAK
TO-220
Unit
DPAK TO-220FP
R
thj-case
R
thj-case
R
thj-amb
Thermal resistance junction-case max
IGBT
Thermal resistance junction-case max
diode
Thermal resistance junction-ambient max
1.9
4
2.0
4.5
62.5
5.1
7
°C/W
°C/W
°C/W
3/18
Electrical characteristics
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs (1)
I
C
= 1 mA
600
V
Collector-emitter saturation V
GE
= 15 V, I
C
= 3 A
voltage
V
GE
= 15 V, I
C
= 3 A, T
C
= 125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 600 V
V
CE
= 600 V, T
C
= 125 °C
V
GE
= ±20 V
V
CE
= 15 V
,
I
C
= 3 A
4.5
2.2
1.8
2.75
V
V
V
µA
mA
nA
S
6.5
150
1
±100
1.9
1. Pulse duration = 300 us, duty cycle 1.5 %
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CE
= 390 V, I
C
= 3 A,
V
GE
= 15 V,
(see Figure 20)
Min.
Typ. Max.
380
46
8.5
19
5
9
Unit
pF
pF
pF
nC
nC
nC
Table 6.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Test conditions
V
CC
= 390 V, I
C
= 3 A
,
R
G
= 10
Ω
V
GE
= 15 V
(see Figure 21)
V
CC
= 390 V, I
C
=3 A
,
R
G
= 10
Ω
V
GE
= 15 V,
T
C
= 125 °C
(see Figure 21)
Min.
Typ.
17
6
655
16.5
6.5
575
Max.
Unit
ns
ns
A/µs
ns
ns
A/µs
4/18
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD
Table 6.
Symbol
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Electrical characteristics
Switching on/off (inductive load) (continued)
Parameter
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
cc
= 390 V, I
C
= 3 A,
,
R
GE
= 10
Ω
V
GE
=15 V
(see Figure 21)
V
cc
= 390 V, I
C
= 3 A,
,
R
GE
=10
Ω
V
GE
=15 V,
T
C
= 125 °C
(see Figure 21)
Min.
Typ.
33
72
82
60
106
136
Max.
Unit
ns
ns
ns
ns
ns
ns
Table 7.
Symbol
E
on(1)
E
off(2)
E
ts
E
on(1)
E
off(2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 390 V, I
C
= 3 A
,
R
G
= 10
Ω
V
GE
=15 V
(see Figure 21)
V
CC
= 390 V, I
C
= 3 A
R
G
= 10
Ω
V
GE
= 15 V,
,
T
C
= 125 °C
(see Figure 21)
Min.
Typ.
55
85
140
Max.
Unit
µJ
µJ
µJ
Turn-on switching losses
Turn-off switching losses
Total switching losses
87
162
249
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
V
F
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 3 A
I
F
= 3 A, T
C
= 125 °C
I
F
= 3 A, V
R
= 30 V,
di/dt = 100 A/µs
(see Figure 22)
I
F
= 3 A,V
R
= 30 V,
T
C
=125 °C, di/dt = 100 A/µs
(see Figure 22)
Min.
Typ.
1.6
1.3
23.5
16.5
1.4
39
39
2
Max.
2.1
Unit
V
V
ns
nC
A
ns
nC
A
5/18
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