GBJ1008: 产品描述3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; 产品类别半导体分立半导体; 文件大小47KB，共2页; 制造商上海商朗电子

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GBJ1008概述

3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

3 A, 800 V, 硅, 桥式整流二极管

GBJ1008规格参数

参数名称	属性值
端子数量	4
元件数量	4
最小击穿电压	800 V
最大平均输入电流	3 A
加工封装描述	塑料, GBJ, 4 PIN
无铅	Yes
欧盟RoHS规范	Yes
状态	ACTIVE
包装形状	矩形的
包装尺寸	凸缘安装
端子形式	THROUGH-孔
端子涂层	NOT SPECIFIED
端子位置	单一的
包装材料	塑料/环氧树脂
结构	桥, 4 ELEMENTS
壳体连接	隔离
二极管元件材料	硅
二极管类型	桥式整流二极管
相数	1
最大重复峰值反向电压	800 V
最大非重复峰值正向电流	170 A

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Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

GBJ10005

THRU

GBJ1010

10 Amp

Glass Passivated

Bridge Rectifier

50 to 1000 Volts

GBJ

Features

Rating to 1000V PRV

Ideal for printed circuit board

Low forward voltage drop, high current capability.

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

Maximum

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

Catalog

Number

GBJ10005

GBJ1001

GBJ1002

GBJ1004

GBJ1006

GBJ1008

GBJ1010

---

DIMENSIONS

INCHES

MIN

1.170

.780

.670

.019

.430

.090

.120

.130

.170

.100

.020

.080

.040

.390

.290

.150

MIN

29.70

19.70

17.00

4.70

10.80

2.30

3.10

3.40

4.40

2.50

0.60

2.00

0.90

9.80

7.30

3.80

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

F(AV)

10 A

Tc = 110°C

Current

Peak Forward Surge

FSM

170A

8.3ms, half sine

Current

Maximum

= 5.0A

1.05V

Instantaneous

Forward Voltage

= 25°C

Maximum DC

Reverse Current At

10 µA

= 25°C

Rated DC Blocking

500uA T

= 125°C

Voltage

Typical thermal

resistance

OJC

1.4

°C

Typical Junction

55 pF

Measured at

Capacitance

1.0MHz, V

=4.0V

*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%

DIM

MAX

1.190

.800

.710

.019

.440

.110

.130

.150

.190

.110

.030

.090

.040

.400

.300

.170

MAX

30.30

20.30

18.00

4.90

11.20

2.70

3.40

3.80

4.80

2.90

0.80

2.40

1.10

10.20

7.70

4.20

NOTE

www.cnelectr.com

GBJ1008相似产品对比

	GBJ1008	GBJ1010	GBJ1006	GBJ1004	GBJ1002	GBJ1001	GBJ10005
描述	3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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