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GBJ1510

产品描述3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小48KB,共2页
制造商上海商朗电子
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GBJ1510概述

3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
GBJ15005
THRU
GBJ1510
15 Amp
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
GBJ
I
A
H
Features
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance 0.8°C/W J to C (With heatsink)
Typical Thermal Resistance 3.5°C/W J to L (Without heatsink)
Typical Thermal Resistance
12°C/W
J to A (Without heatsink)
Maximum
Reccurrent
Peak Reverse
Voltage
GBJ1005
50V
GBJ1501
100V
GBJ1502
200V
GBJ1504
400V
GBJ1506
600V
GBJ1508
800V
GBJ1510
1000V
Device
Marking
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
F
B
E
G
Catalog
Number
GBJ15005
GBJ1501
GBJ1502
GBJ1504
GBJ1506
GBJ1508
GBJ1510
+
P
L
C
M
N
O
O
DIMENSIONS
INCHES
MIN
1.170
.780
.670
.019
.430
.090
.120
.130
.170
.100
.020
.080
.040
.390
.290
.150
MM
MIN
29.70
19.70
17.00
4.70
10.80
2.30
3.10
3.40
4.40
2.50
0.60
2.00
0.90
9.80
7.30
3.80
K
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
2
I t Rating for fusing
I
F(AV)
I
FSM
15 A
240A
Tc = 100°C
8.3ms, half sine
I
FM
= 7.5A
T
J
= 25°C
I
R
10 µA
500uA
T
J
= 25°C
T
J
= 125°C
V
F
1.05V
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
MAX
1.190
.800
.710
.019
.440
.110
.130
.150
.190
.110
.030
.090
.040
.400
.300
.170
MAX
30.30
20.30
18.00
4.90
11.20
2.70
3.40
3.80
4.80
2.90
0.80
2.40
1.10
10.20
7.70
4.20
NOTE
It
2
240A
2
S (t<8.3ms)
Typical Junction
C
J
60 pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
NOTES : 1. Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
2. Device mounted on 300mm * 300mm *1.6mm Cu Plate Heatsink
www.cnelectr.com

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描述 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

 
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