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GBJ2504

产品描述25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小40KB,共1页
制造商重庆平伟实业
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GBJ2504概述

25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
GBJ25005 THRU GBJ2510
GLASS PASSIVATED BRIDGE RECTIFIER
VOLTAGE:50-1000V
CURRENT:25.0A
FEATURES
·Low
leakage
·Low
forward voltage
·Surge
overload ratings-350 Amperes
GBJ
1.193(30.3)
1.169(29.7)
HOLE FOR NO.
6 SCREW
.189(4.8)
.173(4.4)
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL 94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:
Symbols molded or marked on body
·Mounting:
Thru hole for 6# screw
·Weight:
6.6 grams
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.402(1.1)
.386(0.9)
+ ~ ~ -
.119
(0.5) .800(20.3)
.697(17.7)
.441(11.2)
.425(10.8)
.150(3.8)
.134(3.4)
.184(3.4)
.122(3.1)
.031(0.8)
.023(0.6)
.114(2.9)
.165(4.2) .708(18.0) .098(2.5)
.150(3.8) .669(17.0)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
GBJ
25005
V
RRM
50
V
RMS
35
V
DC
50
I
o
I
FSM
V
F
GBJ
2501
100
70
100
GBJ GBJ GBJ GBJ
2502 2504 2506 2508
200 400 600 800
140 280 420 560
200 400 600 800
25
350
1.05
10
I
R
@ T
A
=125°C
500
510
85
2.7
A
2
S
ec
pF
°C/W
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Current at T
C
=100°C
rectified Output
GBJ
units
2510
1000
V
700
V
1000
V
A
A
V
µA
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element at
12.5 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
@ T
A
=25°C
I
2
t
I
2
t Rating for Fusing (t<8.3ms)
C
J
Typical Junction Capacitance per Element(Note
1)
Typical Thermal Resistance, Junction to Case
R
θJA
(Note 2)
Notes: 1.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
PDF
文件½用
"pdfFactory Pro"
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GBJ2504相似产品对比

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描述 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

 
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