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GBJ2506

产品描述4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小44KB,共2页
制造商上海商朗电子
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GBJ2506概述

4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
GBJ25005
THRU
GBJ2510
25 Amp
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
GBJ
I
A
H
Features
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Device
Marking
Maximum
Reccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Catalog
Number
GBJ25005
GBJ2501
GBJ2502
GBJ2504
GBJ2506
GBJ2508
GBJ2510
D
F
B
E
G
---
---
---
---
---
---
---
+
P
L
C
M
N
O
O
DIMENSIONS
INCHES
MIN
1.170
.780
.670
.019
.430
.090
.120
.130
.170
.100
.020
.080
.040
.390
.290
.150
MM
MIN
29.70
19.70
17.00
4.70
10.80
2.30
3.10
3.40
4.40
2.50
0.60
2.00
0.90
9.80
7.30
3.80
K
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
25 A
Tc = 100°C
Current
Peak Forward Surge
I
FSM
350A
8.3ms, half sine
Current
Maximum
I
FM
= 12.5 A
1.05V
Instantaneous
V
F
Forward Voltage
T
J
= 25°C
Maximum DC
Reverse Current At
I
R
10 µA
T
J
= 25°C
Rated DC Blocking
500uA T
J
= 125°C
Voltage
Typical thermal
resistance
R
OJC
0.6
°C
/W
Typical Junction
C
J
85 pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
MAX
1.190
.800
.710
.019
.440
.110
.130
.150
.190
.110
.030
.090
.040
.400
.300
.170
MAX
30.30
20.30
18.00
4.90
11.20
2.70
3.40
3.80
4.80
2.90
0.80
2.40
1.10
10.20
7.70
4.20
NOTE
www.cnelectr.com

GBJ2506相似产品对比

GBJ2506 GBJ2510 GBJ2508 GBJ2504 GBJ2502 GBJ2501 GBJ25005
描述 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

 
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