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GBU1510

产品描述3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小77KB,共2页
制造商HY Electronic
官网地址http://www.hygroup.com.tw
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GBU1510概述

3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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GBU15005 thru GBU1510
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Surge overload rating -240 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
REVERSE VOLTAGE
FORWARD CURRENT
GBU
.437(11.1)
.430(10.9)
.874(22.2)
.860(21.8)
- 50
to
1000Volts
- 15.0
Amperes
.126(3.2)*45°
CHAMFER
.139(3.53)
.133(3.37)
molded plastic technique
Plastic material has U/L
flammability classification 94V-0
Mounting postition:Any
.752(19.1)
.720(18.3)
.073(1.85)
.057(1.45)
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
.401(10.2)
.392(9.80)
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.106(2.7)
.091(2.3)
Dimensions in inches and (milimeters)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.022(.56)
.018(.46)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=100℃ (without heatsink)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 7.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
GBU
15005
50
35
50
GBU
1501
100
70
100
GBU
1502
200
140
200
GBU
1504
400
280
400
15.0
3.2
240
1.1
10.0
500
200
70
2.2
-55 to +150
-55 to +150
GBU
1506
600
420
600
GBU
1508
800
560
800
GBU
1510
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
A
V
μA
A
2
s
pF
℃/W
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.
~ 482 ~

GBU1510相似产品对比

GBU1510 GBU1501 GBU1504 GBU15005 GBU1502 GBU1508 GBU1506
描述 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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