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GBU4B

产品描述BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小143KB,共2页
制造商SECOS
官网地址http://www.secosgmbh.com/
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GBU4B概述

BRIDGE RECTIFIER DIODE

桥式整流二极管

GBU4B规格参数

参数名称属性值
状态ACTIVE
二极管类型BRIDGE RECTIFIER DIODE

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GBU4A ~ GBU4M
Elektronische Bauelemente
VOLTAGE 50V ~ 1000V
4.0
AMP Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free.
GBU
FEATURES
* Ideal For Printed Circuit Board
* Surge Overload Rating -150 Amp Peak
* Reliable Low Cost Construction Utilizing
Molded Plastic Technique
* Plastic Material Has U/L Flammability
Classification 94V-0
* Mounting Position: Any
3.2x3.2
CHAMFER
.139(3.53)
.133(3.37)
.874(22.2)
.860(21.8)
.160(4.1)
.140(3.5)
5
TYP
O
O
10
TYP
.752(19.1)
.720(18.3)
.083(2.1)
.067(1.7)
.232(5.9)
.224(5.7)
.720(18.29)
.680(17.27)
.100(2.54)
.085(2.16)
.080(2.03)
.068(1.65)
.083(2.1)
.075(1.9)
.022(0.56)
.018(0.46)
.210
.210
.190
.190
(5.33) (5.33)
(4.83) (4.83)
.210
.190
(5.33)
(4.83)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified
.
Resistive or inductive load, 60Hz,
For capacitive load, derate current by 20%.
o
TYPE NUMBER
SYMBOL
GBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
UNITS
V
V
V
A
A
V
µA
A
2
S
pF
o
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
Maximum RMS Voltage
V
RMS
30
Maximum DC Blocking Voltage
V
DC
50
Maximum Average Forward
(with heatsink Note2)
I
(AV)
o
Rectified Current @ T
C
=100 C
(without heatsink)
Peak Forward Surge Current, 8.3 ms single
I
FSM
half Sine-wave superimposed
on rated load (JEDEC method)
Maximum Forward Voltage at 2.0A
V
F
o
Maximum DC Reverse Current Ta=25 C
I
R
at Rated DC Blocking Voltage Ta=125
o
C
I
2
t Rating for fusing (t<8.3ms)
I
2
t
Typical Junction Capacitance
C
J
per element (Note1)
Typical Thermal Resistance (Note 2)
JC
Operating Temperature Range
T
J
Storage Temperature Range
T
STG
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Device mounted on 50mm x 50mm x 1.6mm Cu Plate Heatsink.
100
70
100
200
140
200
400
280
400
4.0
2.4
150
1.1
10.0
500
93
600
420
600
800
560
800
1000
700
1000
45
2.2
- 55 ~ + 150
- 55 ~ + 150
C /W
o
C
o
C
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2

GBU4B相似产品对比

GBU4B GBU4M GBU4K GBU4J GBU4G GBU4D GBU4A
描述 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
状态 ACTIVE ACTIVE DISCONTINUED TRANSFERRED - ACTIVE -
二极管类型 BRIDGE RECTIFIER DIODE 桥式整流二极管 桥式整流二极管 桥式整流二极管 - 桥式整流二极管 -

 
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