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2N7000RLRE

产品描述200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
产品类别分立半导体    晶体管   
文件大小66KB,共2页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
下载文档 详细参数 选型对比 全文预览

2N7000RLRE概述

200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

2N7000RLRE规格参数

参数名称属性值
包装说明CYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压60 V
最大漏极电流 (ID)0.2 A
最大漏源导通电阻5 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)5 pF
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型N-CHANNEL
功耗环境最大值0.35 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

2N7000RLRE相似产品对比

2N7000RLRE 2N7000ZL1 2N7000RLRM 2N7000RLRP 2N7000RLRF 2N7000RL 2N7000RL1 2N7000RLRB
描述 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (ID) 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
最大漏源导通电阻 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 5 pF 5 pF 5 pF 5 pF 5 pF 5 pF 5 pF 5 pF
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-W3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-W3 O-PBCY-W3 O-PBCY-T3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
功耗环境最大值 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE WIRE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE WIRE WIRE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1 1
ECCN代码 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99

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