Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
包装说明 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.6 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 30 |
JEDEC-95代码 | TO-205AD |
JESD-30 代码 | O-MBCY-W3 |
JESD-609代码 | e4 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | GOLD |
端子形式 | WIRE |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 50 MHz |
Base Number Matches | 1 |
2N1132.MODG4 | 2N1132-JQR-BG4 | 2N1132-JQRG4 | 2N1132-JQR-AG4 | 2N1132-QRG4 | |
---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 30 | 30 | 30 | 30 | 30 |
JEDEC-95代码 | TO-205AD | TO-205AD | TO-205AD | TO-205AD | TO-205AD |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609代码 | e4 | e4 | e4 | e4 | e4 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
封装主体材料 | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子面层 | GOLD | GOLD | GOLD | GOLD | GOLD |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |
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