COMMERCIAL LASERS
Diode Lasers, 0.5 to 4.0 W, 8xx nm
2300 Series
Key Features
• 0.5, 1.2, 2.0 and 4.0 W CW power
• 50, 100, 200 and 500 µm apertures
• High-efficiency MOCVD quantum well design
• Open heatsink package
• High reliability
Applications
• Solid-state laser pumping
• Medical/ophthalmic applications
• Free-space communication
• Beacons/illumination
The 2300 series diode lasers offer high continuous wave (CW) optical power and
high brightness with unsurpassed reliability. The small emitting aperture,
combined with low beam divergence, makes the 2300 series one of the highest-
brightness CW diode lasers available in the industry today.
The 2300 series consists of partially coherent broad-area emitters with relatively
uniform emission over the emitting aperture. Operation is multi longitudinal
mode with a spectral envelope width of approximately 2 nm FWHM. The far field
beam divergence in the plane perpendicular to the P/N junction is nearly
Gaussian, while the lateral beam profile exhibits a multiple-transverse mode
pattern typical of broad-area emitters. Emitting apertures for 2300 variants range
from 50 to 500 µm, giving CW power output capability of up to 4 W with
superlative reliability. For higher-power 100 and 200 µm aperture devices, JDSU’s
2400 Series diode lasers are ideal.
The high efficiency of the quantum well structure, combined with low thermal
resistance epi-down chip mounting, provides minimum junction temperature at
high optical power. Low junction temperature and low thermal resistance
packages extend lifetime and increase reliability.
These diodes come mounted on conventional open heatsink packages that allow
easy integration into user systems.
NORTH AMERICA
:
800 498-JDSU (5378)
WORLDWIDE
:
+800 5378-JDSU
WEBSITE
:
www.jdsu.com
2300 SERIES DIODE LASERS
2
Dimensions Diagram
(Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02
mm: x.x = ±0.5
x.xxx = ±0.010
x.xx = ±0.25
0.086 (2.18)
0.40 Nom. (10.00)
A-block Open Heatsink Package
Case is
anode ( + )
0.03
0.06
(0.70) or (1.40)
for 2380-A
θ
θ
0.020
(0.51)
Protective Tab
Laser
Output
0.31
(8.00)
0.157
(3.98)
Cathode
Lead ( - )
0.110 (2.80)
Insulator
Stand-off
0.125
(3.18)
0.25 (6.4)
Hole, 0.09 (2.3) Dia.
Counterbore, 0.18 (4.4) Dia.
0.05 (1.2) Deep
2300 SERIES DIODE LASERS
3
Typical Optical Characteristics
2350
Light vs. Current
2360
Light vs. Current
2370
Light vs. Current
2380
Light vs. Current
CW Output Power (W)
0.5
1.2
2.0
4.0
0.3
0.7
1.2
2.0
0
0.2
0.4 0.6 0.8
Current (A)
0
0.4
0.8 1.2 1.6
Current (A)
0
1.0
2.0 3.0 4.0
Current (A)
0
2.0 4.0 6.0 8.0
Current (A)
2350, 2360 and 2370 Laser Emission
Far Field Energy
Distribution
Far Field Energy
Distribution
2380 Laser Emission
Far Field Energy
Distribution
Far Field Energy
Distribution
FWHM
= 32
o
FWHM
= 12
o
FWHM
= 34
o
FWHM
= 12
o
30 15
θ
0
15 30
10 5
(degrees)
θ
0
5
10
40
(degrees)
θ
20
0
20
40
20 10 0 10 20
(degrees)
θ
(degrees)
Typical Emission
Spectrum
805
810
815
Wavelength (nm)
2300 SERIES DIODE LASERS
4
Available Configurations
2350 Series
2350-A
2360 Series
2360-A
2370 Series
2370-A
2380 Series
2380-A
Electro-optical Specifications
Parameter
Laser Characteristics
CW output power
2
Center wavelength
Spectral width
Slope efficiency
Conversion efficiency
Emitting dimensions
FWHM beam divergence
Parallel to junction
Perpendicular to junction
Threshold current
Operating current
Operating voltage
Series resistance
Thermal resistance
Recommended case temperature
Absolute Maximum Ratings
Reverse voltage
Case operating temperature
Storage temperature range
Lead soldering temperature
Symbol
2350 Series
Min.
Typ.
Max.
–
–
–
0.7
–
–
–
–
–
–
–
–
–
-20
–
(note
1
)
2
0.9
30
50 x 1
12
32
0.2
0.8
(note
5
)
0.5
12
–
0.5
–
–
–
–
–
–
–
0.25
0.85
–
0.7
–
30
2360 Series
Min.
Typ.
Max.
–
–
–
0.7
–
–
–
–
–
–
–
–
–
-20
–
(note
1
)
2
0.9
30
100 x 1
12
32
0.4
1.6
(note
5
)
0.25
10
–
1.2
–
–
–
–
–
–
–
0.6
1.8
–
0.5
–
30
Unit
Po
λ
c
Δλ
η
D = Po/(Iop–Ith)
η
= Po/(IopVop)
WxH
θ
//
θ⊥
Ith
Iop
Vop
Rs
Rth
Tc
W
nm
nm
W/A
%
µm
degrees
degrees
A
A
Ω
°C/W
°C
Vrl
Top
Tstg
Tis
–
-20
-40
–
–
–
–
–
3
50
80
250 (5 sec.)
–
-20
-40
–
–
–
–
–
3
50
80
250 (5 sec.)
V
°C
°C
°C
1.
Consult table on page 6 for the particular wavelength ranges that are available.
2. Typical values at 25 °C and 0.6 NA collection optics.
3. Features common to these products include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.27 to 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
I
TH2
= I
TH1
exp [(T
2
– T
1
)/T
0
]
where T
0
is a device constant of about 160° K.
d. Temperature coefficient of operating current is approximately 1% per °C.
4. Modulation bandwidth of CW diode lasers is approximately 1 GHz though the effective rep rates are dependent on drive signals and use conditions.
5. Forward voltage is typically:
V
f
= 1.5 V + I
op
x R
s
.
2300 SERIES DIODE LASERS
5
Electro-optical Specifications
Continued
Parameter
Laser Characteristics
CW output power
2
Center wavelength
Spectral width
Slope efficiency
Conversion efficiency
Emitting dimensions (note
6
)
FWHM beam divergence
Parallel to junction
Perpendicular to junction
Threshold current
Operating current
Operating voltage
Series resistance
Thermal resistance
Recommended case temperature
Absolute Maximum Ratings
Reverse voltage
Case operating temperature
Storage temperature range
Lead soldering temperature
Symbol
2370 Series
Min.
Typ.
Max.
–
–
2
2380 Series
Min.
Typ.
Max.
–
–
4
Unit
Po
λ
c
Δλ
η
D = Po/(Iop–Ith)
η
= Po/(IopVop)
WxH
θ
//
θ⊥
Ith
Iop
Vop
Rs
Rth
Tc
W
–
–
0.7
–
–
–
–
–
–
–
–
–
-20
(note
1
)
2
0.9
30
200 x 1
12
32
0.9
3.1
(note
5
)
0.12
8
–
–
–
–
–
–
–
–
1.2
3.4
–
0.2
–
30
–
–
0.7
–
–
–
–
–
–
–
–
–
-20
(note
1
)
2
0.9
30
500 x 1
12
32
2.0
6.3
(note
5
)
0.08
4
–
–
–
–
–
–
–
–
2.5
6.8
–
0.1
–
30
nm
nm
W/A
%
µm
degrees
degrees
A
A
Ω
°C/W
°C
Vrl
Top
Tstg
Tis
–
-20
-40
–
–
–
–
–
3
50
80
250 (5 sec.)
–
-20
-40
–
–
–
–
–
3
50
80
250 (5 sec.)
V
°C
°C
°C
1.
Consult table on page 6 for the particular wavelength ranges that are available.
2. Typical values at 25 °C and 0.6 NA collection optics.
3. Features common to these products include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.27 to 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
I
TH2
= I
TH1
exp [(T
2
– T
1
)/T
0
]
where T
0
is a device constant of about 160 °K.
d.Temperature coefficient of operating current is approximately 1% per °C.
4. Modulation bandwidth of CW diode lasers is approximately 1 GHz though the effective rep rates are dependent on drive signals and use conditions.
5. Forward voltage is typically:
V
f
= 1.5 V + I
op
x R
s
.
6. The 2380 series near field consists of two active segments separated by an isolation space to produce specified aperture.
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