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JAN2N6052

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小79KB,共15页
制造商Aeroflex Metelics / Hi-Rel Components
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JAN2N6052概述

Transistor

JAN2N6052规格参数

参数名称属性值
Objectid113952358
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)12 A
配置DARLINGTON
最小直流电流增益 (hFE)750
最高工作温度200 °C
极性/信道类型PNP
最大功率耗散 (Abs)150 W
表面贴装NO
标称过渡频率 (fT)4 MHz

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The documentation process conversion
measures necessary to comply with this
revision shall be completed by 23 August 1997
INCH POUND
MIL-PRF-19500/501C
23 May 1997
SUPERSEDING
MIL-S-19500/501B
25 March 1995
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER
TYPE 2N6051, 2N6052 JAN, JANTX, AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of
product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-3).
1.3 Maximum ratings.
|
PT
1/
| VCBO
|
|
| TC = +25°C | TC = +100°C |
|
|
|
|
| W
| W
| V dc
| 2N6051 | 150
| 75
| 80
| 2N6052 | 150
| 75
| 100
1/ Derate linearly at 1.00 W/°C above TC > +25°C.
1.4 Primary electrical characteristics.
|
|
|
|
|
| Min
| Max
|
|
|
|
|
| Min
| Max
| hFE2 1/
| VCE = 3 V dc
| IC = 6 A dc
|
|
| 1,000
| 18,000
| hFE3 1/
| VCE = 3 V dc
| IC = 12 A dc
|
|
| 150
|
| hfe
| VCE = 3 V dc
| IC = 5 A dc
| f = 1 kHz
|
| 1,000
|
| |hfe|
| VCE = 3 V dc
| IC = 5 A dc
| f = 1 MHz
|
|
10
| 250
| R
θJC
|
|
|
|
°C/W
|
| 1.00
| Cobo
| 100 kHz
f
1 MHz
| VCB = 10 V dc, IE = 0
|
|
pF
|
|
300
|
|
|
|
|
|
|
| Pulse response
|
| ton
| toff
|
|
|
µs
|
µs
|
|
| 2
| 10
|
|
|
|
|
|
|
| VCEO
|
|
|
| V dc
| 80
| 100
| VEBO | IC
|
|
|
|
|
|
| V dc | A dc
| 5
| 12
| 5
| 12
| IB
|
|
|
| A dc
| 0.2
| 0.2
| Tp and TSTG
|
|
|
|
°C
| -55 to +175
| -55 to +175
|
|
|
|
|
|
|
| VBE(sat)
| IC = 12 A dc
| IB = 120 mA dc 1/
|
| V dc
|
|
4.0
| VCE(sat)1
| IC = 12 A dc
| IB = 120 mA dc 1/
|
| V dc
|
|
3.0
| VCE(sat)2
| IC = 6 A dc
| IB = 24 mA dc 1/
|
| V dc
|
|
2.0
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
1/ Pulsed, see 4.5.1
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

JAN2N6052相似产品对比

JAN2N6052 JANTX2N6052 JAN2N6051 JANTXV2N6052
描述 Transistor Transistor Transistor Transistor
Reach Compliance Code unknown unknown unknown unknown
最大集电极电流 (IC) 12 A 12 A 12 A 12 A
配置 DARLINGTON DARLINGTON DARLINGTON DARLINGTON
最小直流电流增益 (hFE) 750 750 750 750
最高工作温度 200 °C 200 °C 200 °C 200 °C
极性/信道类型 PNP PNP PNP PNP
最大功率耗散 (Abs) 150 W 150 W 150 W 150 W
表面贴装 NO NO NO NO
标称过渡频率 (fT) 4 MHz 4 MHz 4 MHz 4 MHz
Objectid 113952358 113952151 - 113951968
ECCN代码 EAR99 EAR99 - EAR99

 
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