LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mA, 60 V
N–Channel SOT–323
•
We declare that the material of product compliance with
RoHS requirements.
L2N7002WT1G
S-L2N7002WT1G
3
•
ESD Protected:1000V
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2N7002WT1G
S-L2N7002WT1G
L2N7002WT3G
S-L2N7002WT3G
Marking
6C
6C
Shipping
3000 Tape & Reel
10000
Tape & Reel
1
2
SOT– 323 (SC-70)
Simplified Schematic
Gate
1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1.0 MΩ)
Drain Current
– Continuous T
C
= 25°C (Note 1.)
– Continuous
T
C
= 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
µs)
Symbol
V
DSS
V
DGR
I
D
I
D
Value
60
60
±115
±75
±800
Unit
V
dc
V
dc
mAdc
(Top View)
Source
2
3
Drain
I
DM
V
GS
V
GSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J,
T
stg
417
-55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Gate
6C
M
1
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
R
θJA
P
D
6C
M
Source
2
= Device Code
=Month Code
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Rev .A 1/6
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
µAdc)
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 60 Vdc)
Gate–Body Leakage Current, Forward
(V
GS
= 20 Vdc)
Gate–Body Leakage Current, Reverse
(V
GS
= – 20 Vdc)
T
J
= 25°C
T
J
= 125°C
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
60
–
–
–
–
–
–
–
–
–
–
1.0
500
1
-1
Vdc
µAdc
µ
Adc
µ
Adc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
µAdc)
On–State Drain Current
(V
DS
≥
2.0 V
DS(on)
, V
GS
= 10 Vdc)
Static Drain–Source On–State Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
Static Drain–Source On–State Resistance
T
C
= 25°C
(V
GS
= 10 V, I
D
= 500 mAdc)
T
C
= 125°C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc) T
C
= 25°C
T
C
= 125°C
Forward Transconductance
(V
DS
≥
2.0 V
DS(on)
, I
D
= 200 mAdc)
V
GS(th)
I
D(on)
V
DS(on)
1.0
500
1.6
–
2.5
–
Vdc
mA
Vdc
–
–
–
–
–
–
80
–
–
1.4
–
1.8
–
–
3.75
0.375
7.5
13.5
7.5
13.5
–
r
DS(on)
Ohms
g
FS
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
C
oss
C
rss
–
–
–
17
10
2.5
50
25
5.0
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V
DD
= 25 Vdc , I
D
^
500 mAdc,
R
G
= 25
Ω,
R
L
= 50
Ω,
V
gen
= 10 V)
t
d(on)
t
d(off)
V
SD
I
S
I
SM
–
–
7
11
20
40
ns
ns
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(I
S
= 115 mAdc, V
GS
= 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
–
–
–
–
–
–
–1.5
–115
–800
Vdc
mAdc
mAdc
Rev .A 2/6
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
0.45
0.4
0.35
0.45
0.4
0.35
ID,DRAIN CURRENT(A)
ID,DRAIN CURRENT(A)
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
8
10
12
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
8
10
VDS,DRAIN-TO-SOURCE VOLTAGE(V)
VGS=3V
VGS=7V
VGS=4V
VGS=8V
VGS=5V
VGS=9V
VGS=6V
VGS=10V
VGS,GATE-TO-SOURCE VOLTAGE(V)
-55℃
25℃
75℃
100℃
125℃
Fig. 1 ON-REGION CHARACTERISTICS
Fig. 2 TRANSFER CHARACTERISTICS
RDS(on),DRAIN-TO-SOURCE RESISTANCE
(Ω)
RDS(on),DRAIN-TO-SOURCE RESISTANCE
(Ω)
6
8
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
0
0.1
0.2
0.3
0.4
0.5
VGS=10V
5
VGS=4.5V
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
ID,DRAIN CURRENT(A)
-55℃
25℃
75℃
100℃
125℃
-55℃
ID,DRAIN CURRENT(A)
25℃
75℃
100℃
125℃
Fig. 3 ON-RESISTANCE VS. DRAIN CURRENT
AND TEMPERATURE
Fig. 4 ON-RESISTANCE VS. DRAIN CURRENT
AND TEMPERATURE
Rev .A 3/6
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
10
35
RDS(on),DRAIN-TO-SOURCE RESISTANCE
(Ω)
9
8
7
6
5
4
3
2
Ta=25℃，
ID=0.2A
30
Tj=25℃，
VGS=0V,f=1MHz
C,CAPACITANCE(pF)
25
20
15
10
5
1
0
0
2
4
6
8
10
12
0
0
5
10
15
20
25
30
35
VGS,GATE-TO-SOURCE VOLTAGE(V)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE(V)
Ciss
Coss
Crss
Fig. 5 ON-RESISTANCE VS.GATE-TO-SOURCE
VOLTAGE
2
Fig. 6 CAPACITANCE VARIATION
1
VGS(th),GATE THRESHOLD VOLTAGE(V)
VGS=0V
VGS=VDS,ID=250uA
1.8
IS,SOURCE CURRENT(A)
1.6
0.1
1.4
1.2
0.01
0
0.5
1.0
1.5
1
0
20
40
60
80
100
120
140
VSD,SOURCE-TO-DRAIN VOLTAGE(V)
-55℃
25℃
75℃
100℃
125℃
T,TEMPERATURE
(℃)
Fig. 7 DIODE FORWARD VOLTAGE VS.CURRENT
Fig. 8 TEMPERATURE VS.GATE
THRESHOLD VOLTAGE
Rev .A 4/6
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
IDSS,ZERO GATE VOLTAGE DRAIN CURRENT(uA)
0.6
0.5
Tj=25℃，
VGS=OV,VDS=60V
0.4
0.3
0.2
0.1
0
0
25
50
75
100
125
150
T,TEMPERATURE
(℃)
Fig. 9 TEMPERATURE VS.DRAIN CURRENT
Rev .A 5/6
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