MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2205, LV2209
Silicon Tuning Diodes
6.8–100 pF, 30 Volts
Voltage Variable Capacitance Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid–state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
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Cathode
SOT–23
1
Anode
•
•
•
•
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance – 10%
Complete Typical Design Curves
2
Cathode
TO–92
1
Anode
MARKING
DIAGRAM
3
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
MMBV21xx
Derate above 25°C
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
MV21xx
LV22xx
TJ
Tstg
Symbol
VR
IF
PD
225
1.8
280
2.8
+150
–55 to +150
°C
°C
1
Value
30
200
Unit
Vdc
mAdc
mW
mW/°C
1
2
XXX M
TO–236AB, SOT–23
CASE 318–08
STYLE 8
XXX
= Device Code*
M
= Date Code
* See Table
XX
XXXX
YWW
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
MV2101 = MV2101
MV2105 = MV2105
MV2109 = MV2109
LV2205 = LV2205
LV2209 = LV2209
2
TO–226AC, TO–92
CASE 182
STYLE 1
XX
= Device Code Line 1*
XXXX = Device Code Line 2*
M
= Date Code
* See Table
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
µAdc)
MMBV21xx, MV21xx
LV22xx
Reverse Voltage Leakage
Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance
Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Symbol
V(BR)R
30
25
IR
–
–
–
–
–
–
0.1
µAdc
Min
Typ
Max
Unit
Vdc
Preferred
devices are recommended choices for future use
and best overall value.
TCC
–
280
–
ppm/°C
©
Semiconductor Components Industries, LLC, 2001
1
October, 2001 – Rev. 3
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
MMBV2101LT1/MV2101
MMBV2103LT1
LV2205/MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1
LV2209MMBV2109LT1/MV2109
Min
6.1
9.0
13.5
19.8
24.3
29.7
Nom
6.8
10
15
22
27
33
Max
7.5
11
16.5
24.2
29.7
36.3
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Typ
450
400
400
350
300
200
Min
2.5
2.5
2.5
2.5
2.5
2.5
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Typ
2.7
2.9
2.9
2.9
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = –65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85°C in the following equation, which defines TCC:
TCC
+
CT() 85°C) – CT(–65°C)
106
·
85
)
65
CT(25°C)
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
Q
+
2pfC
G
Accuracy limited by measurement of CT to
±0.1
pF.
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[
1/16”.
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
500
C T , DIODE CAPACITANCE (pF)
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
TA = 25°C
f = 1.0 MHz
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
1.040
NORMALIZED DIODE CAPACITANCE
I R , REVERSE CURRENT (nA)
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
-75
-50
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
-25
0
+25
+50
+75
TJ, JUNCTION TEMPERATURE (°C)
+100
+125
VR = 4.0 Vdc
VR = 30 Vdc
VR = 2.0 Vdc
100
50
20
10
5.0
2.0
1.0
0.50
0.20
0.10
0.05
0.02
0.01
0
5.0
10
15
20
25
30
TA = 125°C
TA = 75°C
TA = 25°C
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
5000
3000
2000
Q, FIGURE OF MERIT
1000
500
300
200
100
50
30
20
10
1.0
2.0
10
3.0
5.0
7.0
VR, REVERSE VOLTAGE (VOLTS)
TA = 25°C
f = 50 MHz
20
30
MMBV2101LT1/MV2101
MMBV2109LT1
Q, FIGURE OF MERIT
5000
3000
2000
1000
500
300
200
100
50
30
20
10
10
Figure 3. Reverse Current versus Reverse Bias
Voltage
MMBV2101LT1/MV2101
TA = 25°C
VR = 4.0 Vdc
20
MMBV2109LT1/MV2109
100
30
50
70
f, FREQUENCY (MHz)
200
250
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
0.037
0.95
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by TJ(max), the maximum rated junction temperature
of the die, R
θJA
, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the SOT–23
package, PD can be calculated as follows:
PD =
TJ(max) – TA
R
θJA
SOLDERING PRECAUTIONS
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad™. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
•
Always preheat the device.
•
The delta temperature between the preheat and
soldering should be 100°C or less.*
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 7 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
STEP 5
STEP 4
HEATING
HEATING
ZONES 4 & 7
ZONES 3 & 6
SPIKE"
SOAK"
170°C
160°C
STEP 6 STEP 7
VENT COOLING
205° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
150°C
150°C
100°C
100°C
140°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 6. Typical Solder Heating Profile
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