Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD,
| 参数名称 | 属性值 |
| Reach Compliance Code | unknown |
| 其他特性 | LOW THRESHOLD |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 35 V |
| 最大漏极电流 (ID) | 1.4 A |
| 最大漏源导通电阻 | 1.8 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 10 pF |
| JEDEC-95代码 | TO-205AD |
| JESD-30 代码 | O-MBCY-W3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| 2N6659B | 2N6660B | VQ1004P-1 | VQ1004P-2 | VQ1004J-2 | VQ1004J-1 | |
|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, | Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, | Small Signal Field-Effect Transistor, 0.46A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 0.46A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 0.46A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 4-Element, Silicon, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | R-PDIP-T14 | R-PDIP-T14 | R-PDIP-T14 | R-PDIP-T14 |
| 元件数量 | 1 | 1 | 4 | 4 | 4 | 4 |
| 端子数量 | 3 | 3 | 14 | 14 | 14 | 14 |
| 封装主体材料 | METAL | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 端子形式 | WIRE | WIRE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | BOTTOM | BOTTOM | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最小漏源击穿电压 | 35 V | 60 V | 60 V | 60 V | 60 V | - |
| 最大漏极电流 (ID) | 1.4 A | 1.1 A | 0.46 A | 0.46 A | 0.46 A | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| 最大反馈电容 (Crss) | 10 pF | 10 pF | 10 pF | 10 pF | 10 pF | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
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