Product Bulletin JANTX, JANTXV, 2N4854U
September 1996
Surface Mount NPN/PNP Complementary Transistors
Type JANTX, JANTXV, 2N4854U
.058 (1.47)
Features
•
Ceramic surface mount package
•
Miniature package to minimize circuit
board area required
•
Hermetically sealed
•
Per MIL-PRF-19500/421
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
NPN to PNP Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 VDC
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA
Operating Junction Temperature (T
J
). . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Storage Junction Temperature (T
stg
) . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Power Dissipation @ T
A
= 25
o
C (both transistors driven equally) . . . . . . . . . . . 0.6 W
Power Dissipation @ T
C
= 25
o
C (both transistors driven equally) . . . . . . . . . 2.0 W
(1)
Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . . . . 215
o
C
Soldering Temperature (heated Collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
Notes:
(1) Derate linearly 3.4 mW/
o
C above 25
o
C.
Description
The JANTX2N4854U is a hermetically
sealed, ceramic surface mount,
complementary transistor pair. The
JANTX2N4854U consists of an NPN
transistor die and PNP transistor die.
This surface mount package is the most
recent addition to MIL-PRF-19500/421.
The “ designator denotes the 6
U”
terminal (C-6) leadless chip carrier
package option. The miniature six pin
ceramic package is ideal for designs
where board space and device weight
are important design considerations.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is V
CB
= 30 V, P
D
= 300
mW each transistor T
A
= 25
o
C. Refer
to MIL-PRF-19500/421 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-12
(972)323-2200
Fax (972)323-2396
Types JANTX, JANTXV, 2N4854U
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted) See Note 3
SYMBOL
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
PARAMETER
MIN MAX UNIT
60
40
5.0
10.0
10.0
V
V
V
nA
µA
nA
-
-
-
-
300
-
-
-
0.40
0.8
1.5
9
50
60
300
8
2.0
8.0
8.0
45
300
V
V
kΩ
TEST CONDITIONS
I
C
= 10.0
µA,
I
E
= 0
I
C
= 10.0 mA, I
B
= 0
I
E
= 10.0
µA,
I
C
= 0
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 150
o
C
V
EB
= 3.0 V, I
C
= 0
V
CE
= 1 V, I
C
= 150 mA
(2)
V
CE
= 10.0 V, I
C
= 0.1 mA
V
CE
= 10.0 V, I
C
= 1.0 mA
V
CE
= 10.0 V, I
C
= 10 mA
(2)
V
CE
= 10.0 V, I
C
= 150 mA
(2)
V
CE
= 10.0 V, I
C
= 300 mA
(2)
V
CE
= 10.0 V, I
C
= 10 mA, T
A
= -55
o
C
(2)
I
C
= 150 mA, I
B
= 15 mA
(2)
I
C
= 150 mA, I
B
= 15 mA
(2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
I
EBO
h
FE
Emitter-Base Cutoff Current
DC Current Transfer Ratio
50
35
50
75
100
35
12
10.0
On Characteristics
V
CE(SAT)
V
BE(SAT)
h
ie
h
oe
h
fe
NF
Ih
fe
I
C
obo
t
on
t
off
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Common Emitter Input
Impedance
Small Signal Common Emitter Output
Admittance
Small Signal Current Transfer Ratio
Noise Figure
Small Signal Current Transfer Ratio
Output Capacitance
Turn-On Time
Turn-Off Time
Small-Signal Characteristics
µmho
V
CE
= 10 V, I
C
= 1.0 mA, f = 1.0 kHz
-
db
-
pF
ns
ns
f = 1.0 kHz, R
G
= 1.0 kΩ , I
C
= 0.1 mA, V
CE
= 10
V
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
V
CB
= 10 V, 100 kHz
≤
f
≤
1.0 MHz
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA
Switching Characteristics
(2) Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
(3) Polarities given are for the NPN device. Reverse polarity on limits and conditions as applicable for the PNP side.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-13
(972)323-2200
Fax (972)323-2396
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