Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon, TO-92,
参数名称 | 属性值 |
Reach Compliance Code | unknown |
最大集电极电流 (IC) | 0.05 A |
配置 | SINGLE |
最小直流电流增益 (hFE) | 30 |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 125 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 130 MHz |
VCEsat-Max | 0.9 V |
Base Number Matches | 1 |
2SA639SR | 2SA639SP | 2SA639SQ | 2SA639S | |
---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon, TO-92, |
Reach Compliance Code | unknown | unknown | unknown | unknown |
最大集电极电流 (IC) | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 30 | 150 | 100 | 30 |
JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 130 MHz | 130 MHz | 130 MHz | 130 MHz |
VCEsat-Max | 0.9 V | 0.9 V | 0.9 V | 0.9 V |
Base Number Matches | 1 | 1 | 1 | 1 |
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