2SC2785,2SC2785 pdf中文资料,2SC2785引脚图,2SC2785电路-Datasheet-电子工程世界

2SC2785: 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,; 产品类别分立半导体晶体管; 文件大小138KB，共3页; 制造商NEC(日电)

下载文档详细参数选型对比全文预览

2SC2785概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

2SC2785规格参数

参数名称	属性值
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	4 pF
集电极-发射极最大电压	50 V
配置	SINGLE
最小直流电流增益 (hFE)	90
JESD-30 代码	R-PSIP-T3
元件数量	1
端子数量	3
最高工作温度	125 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

2SC2785相似产品对比

	2SC2785	2SC2785R	2SC2785H	2SC2785F	2SC2785J	2SC2785E	2SC2785K
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	4 pF	4 pF	4 pF	4 pF	4 pF	4 pF	4 pF
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	90	110	170	200	135	250	300
JESD-30 代码	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
元件数量	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
Base Number Matches	1	1	1	1	1	1	1

推荐资源

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多