Power Field-Effect Transistor, 1A I(D), 100V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN
参数名称 | 属性值 |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown |
其他特性 | LOGIC LEVEL COMPATIBLE |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V |
最大漏极电流 (ID) | 1 A |
最大漏源导通电阻 | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
功耗环境最大值 | 10 W |
最大脉冲漏极电流 (IDM) | 3 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
2SK611-Z | 2SK611-Z-T1 | 2SK611-Z-T2 | |
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描述 | Power Field-Effect Transistor, 1A I(D), 100V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN | Power Field-Effect Transistor, 1A I(D), 100V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN | Power Field-Effect Transistor, 1A I(D), 100V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown | unknown | unknown |
其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
外壳连接 | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V | 100 V | 100 V |
最大漏极电流 (ID) | 1 A | 1 A | 1 A |
最大漏源导通电阻 | 5 Ω | 5 Ω | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
功耗环境最大值 | 10 W | 10 W | 10 W |
最大脉冲漏极电流 (IDM) | 3 A | 3 A | 3 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 |
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