LESHAN RADIO COMPANY, LTD.
Silicon N-Channel MOSFET
Applications
Interfacing,switching(30V,100mA)
L2SK3019LT1G
S-L2SK3019LT1G
3
Features
Low on-resistance
Fast switching speed
Low voltage drive(2.5V) makes this ideal for portable equipment
Drive circuits can be simple
Parallel use is easy
ESD>500
1
2
SOT– 23
Equivalent circuit
Drain
we declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
Gate
∗
Gate
Protection
Diode
ORDERING INFORMATION
Device
L2SK3019LT1G
S-L2SK3019LT1G
L2SK3019LT3G
S-L2SK3019LT3G
Marking
KN
KN
Shipping
3000/Tape & Reel
Source
o
A pr
tection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
10,000/Tape & Reel
Maximum Ratings and Thermal Characteristics
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
2)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
Limit
30
± 20
± 100
± 400
225
-55 to 150
Unit
V
mA
mW
o
Total Power Dissipation
Operating Junction and Storage Temperature Range
1)
Pw≤10µs, Duty cycle≤1%
2)
With each pin mounted on the recommended lands.
C
Rev .A 1/4
LESHAN RADIO COMPANY, LTD.
L2SK3019LT1G,S-L2SK3019LT1G
Electrical characteristics
(Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
|Y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
ms
pF
pF
pF
ns
ns
ns
ns
Conditions
V
GS
=±20V,
V
DS
=0V
I
D
=10µA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=3V,
I
D
=100µA
I
D
=10mA,
V
GS
=4V
I
D
=1mA,
V
GS
=2.5V
I
D
=10mA,
V
DS
=3V
V
DS
=5V
V
GS
=0V
f=1MHz
I
D
=10mA,
V
DD
V
GS
=5V
R
L
=500Ω
R
G
=10Ω
5V
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
0.15
4V
DRAIN CURRENT : I
D
(A)
200m
3V
DRAIN CURRENT : I
D
(A)
3.5V
Ta=25°C
Pulsed
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
V
DS
=3V
Pulsed
2
V
DS
=3V
I
D
=0.1mA
Pulsed
1.5
0.1
2.5V
1
0.05
2V
V
GS
=
1.5V
Ta=125°C
75°C
25°C
−25°C
0.5
0
0
1
2
3
4
5
0.1m
0
1
2
3
4
0
−50 −25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch (°C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs.
channel temperature
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=4V
Pulsed
50
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
15
Ta=25°C
Pulsed
10
2
1
0.5
0.001 0.002
2
1
0.5
0.001 0.002
5
I
D
=0.1A
I
D
=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev .A 2/4
LESHAN RADIO COMPANY, LTD.
L2SK3019LT1G,S-L2SK3019LT1G
9
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
REVERSE DRAIN CURRENT : I
DR
(A)
8
7
6
5
4
3
2
1
0
−50 −25
0
25
50
75
I
D
=100mA
V
GS
=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.5
V
DS
=3V
Pulsed
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
0.2
0.1
0.05
0.02
0.01
0.005
0.002
Ta=−25°C
25°C
75°C
125°C
V
GS
=0V
Pulsed
I
D
=50mA
Ta=125°C
75°C
25°C
−25°C
100 125
150
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
Fig.8 Forward transfer
admittance vs. drain current
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
200m
REVERSE DRAIN CURRENT : I
DR
(A)
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
V
GS
=4V
0V
Ta=25°C
Pulsed
50
20
CAPACITANCE : C (pF)
Ta
=25°C
f=1MH
Z
V
GS
=0V
1000
500
SWITHING TIME : t (ns)
t
f
t
d(off)
C
iss
10
5
200
100
50
20
10
5
2
0.1 0.2
Ta=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
C
oss
C
rss
2
1
0.5
0.1
t
r
t
d(on)
1.5
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Switching characteristics measurement circuit
Pulse width
50%
10%
10%
90%
50%
V
GS
I
D
D.U.T.
R
L
V
DS
V
GS
V
DS
R
G
10%
90%
90%
t
d (off)
t
f
t
off
V
DD
t
d (on)
t
on
t
r
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Rev .A 3/4
LESHAN RADIO COMPANY, LTD.
L2SK3019LT1G,S-L2SK3019LT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
C
D
H
K
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .A 4/4
模拟与混合信号
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