LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Low Cob,Cob=2pF(Typ.).
Epitaxial planar type.
PNP complement:L2SA1576A
L2SC4081QT1G Series
S-L2SC4081QT1G Series
3
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SC4081QT1G
S-L2SC4081QT1G
L2SC4081QT3G
S-L2SC4081QT3G
L2SC4081RT1G
S-L2SC4081RT1G
L2SC4081RT3G
S-L2SC4081RT3G
L2SC4081ST1G
S-L2SC4081ST1G
L2SC4081ST3G
S-L2SC4081ST3G
Marking
BQ
BQ
BR
BR
BS
BS
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
SC-70/SOT– 323
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
Value
50
60
7.0
150
0.15
150
-55 ~+150
Unit
V
V
V
mAdc
W
°C
°C
I
C
P
C
T
j
T
stg
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= 1 mA)
Emitter–Base Breakdown Voltage
(I
E
= 50
µA)
Collector–Base Breakdown Voltage
(I
C
= 50
µA)
Collector Cutoff Current
(V
CB
= 60 V)
Emitter cutoff current
(V
EB
= 7 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
(V
CE
= 12 V, I
E
= – 2mA, f =30MHz )
Output capacitance
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
Symbol
V
V
V
(BR)CEO
Min
50
7
60
—
—
—
120
—
—
Typ
—
—
—
—
—
—
––
180
2.0
Max
—
—
—
0.1
0.1
0.4
560
––
3.5
Unit
V
V
V
µA
µA
V
––
MHz
pF
(BR)EBO
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
h
FE
*
Q
120~270
R
180~390
S
270~560
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
Fig.1 Grounded emitter propagation characteristics
50
Fig.2 Grounded emitter output characteristics( )
100
0.50mA
T
A
= 25°C
V
CE
= 6 V
20
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
80
10
50
T
A
= 100°C
25°C
60
2
1
– 55°C
40
0.5
20
0.2
0.1
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
0
0
0.4
0.8
1.2
1.6
2.0
V
BE
, BASE TO EMITTER VOLTAGE(V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
10
Fig.4 DC current gain vs. collector current ( )
500
I
C
, COLLECTOR CURRENT (mA)
8
6
h
FE
, DC CURRENT GAIN
0
4
8
12
16
20
200
100
4
50
2
20
0
10
0.2
0.5
1
2
5
10
20
50
100
200
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs.
collector current
0.5
500
0.2
h
FE
, DC CURRENT GAIN
200
0.1
100
0.05
50
0.02
20
0.01
0.2
0.5
1
2
5
10
20
50
100
200
10
0.2
0.5
1
2
5
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
0.5
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.01
0.2
0.5
1
2
5
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C
ob
, COLLECTOR OUTPUT CAPACITANCE( pF)
C
ib
, EMITTER INPUT CAPACITANCE (pF)
20
f
r
, TRANSITION FREQUENCY(MHz)
500
10
200
5
100
2
50
–0.5
–1
–2
–5
–10
–20
–50
–100
1
0.2
0.5
1
2
5
10
20
50
I
E
, EMITTER CURRENT (mA)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
Fig.11 Base-collector time constant vs.emitter current
C c
-
r
bb
, BASE COLLECTOR TIME CONSTANT( ps)
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I
E
, EMITTER CURRENT (mA)
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
SC-70 / SOT-323
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
A1
GENERIC
MARKING DIAGRAM
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
XX
M
XX
M
1
= Specific Device Code
= Date Code
= Pb−Free Package
G
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
mm
inches
Rev.O 5/5
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