LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Features
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2SA1037AKQLT1G
S-L2SA1037AKQLT1G
L2SA1037AKQLT3G
S-L2SA1037AKQLT3G
Package
SOT23
SOT23
Shipping
3000/Tape & Reel
10000/Tape & Reel
SOT– 23
1
2
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
Value
–50
–60
–6.0
–150
0.2
150
-55 ~+150
Unit
V
V
V
mAdc
W
°C
°C
1
BASE
3
COLLECTOR
V
CBO
V
EBO
2
EMITTER
I
C
P
C
T
j
T
stg
DEVICE MARKING
L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 50
µA)
Collector–Base Breakdown Voltage
(I
C
= – 50
µA)
Collector Cutoff Current
(V
CB
= – 60 V)
Emitter cutoff current
(V
EB
= – 6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
Symbol
V
V
V
(BR)CEO
Min
– 50
–6
– 60
—
—
—
120
—
—
Typ
—
—
—
—
—
—
––
140
4.0
Max
—
—
—
– 0.1
– 0.1
-0.5
560
––
5.0
Unit
V
V
V
µA
µA
V
––
MHz
pF
(BR)EBO
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
Fig.1 Grounded emitter propagation characteristics
–50
Fig.2 Grounded emitter output characteristics( )
–10
–35.0
T
A
= 25°C
–31.5
–28.0
–24.5
–20
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
T
A
= 100°C
25°C
– 40°C
V
CE
= –10 V
–8
–10
–50
–6
–21.0
–17.5
–2
–1
–4
–14.0
–10.5
–0.5
–2
–7.0
–3.5µA
–0.2
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
0
0
–0.4
–0.8
–1.2
–1.6
I
B
=0
–2.0
V
BE
, BASE TO EMITTER VOLTAGE(V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
–100
Fig.4 DC current gain vs. collector current ( )
500
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
–80
T
A
= 25°C
h
FE
, DC CURRENT GAIN
–60
500
450
400
350
300
V
CE
= –5 V
–3V
–1V
200
–250
–200
–40
–150
–100
100
–20
–50
µA
I
B
=0
0
–1
–2
–3
–4
–5
50
0
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
500
–1
T
A
= 100°C
25°C
T
A
= 25°C
–0.5
h
FE
, DC CURRENT GAIN
–40°C
200
–0.2
I
C
/I
B
= 50
–0.1
100
20
10
50
–0.05
V
CE
= – 6V
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
–1
Fig.8 Gain bandwidth product vs. emitter current
1000
I
C
/I
B
= 10
–0.5
f
r
, TRANSITION FREQUENCY(MHz)
T
A
= 25°C
V
CE
= –12V
500
–0.2
200
–0.1
T
A
= 100°C
25°C
–40°C
100
–0.05
50
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
E
, EMITTER CURRENT (mA)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C
ob
, COLLECTOR OUTPUT CAPACITANCE( pF)
C
ib
, EMITTER INPUT CAPACITANCE (pF)
20
C
ib
10
T
A
= 25°C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ob
5
2
–0.5
–1
–2
–5
–10
–20
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
D
H
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
NXP MCU
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