LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2SA1576AQLT1G Series
S-L2SA1576AQLT1G Series
L2SA1576AQLT3G Series
S-L2SA1576AQLT3G Series
Package
SC-70
SC-70
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
SC-70/SOT– 323
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
Value
–50
–60
–6.0
–150
0.15
150
-55 ~+150
Unit
V
V
V
1
BASE
3
COLLECTOR
2
I
C
P
C
T
j
T
stg
mAdc
W
°C
°C
EMITTER
DEVICE MARKING
L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 50
µA)
Collector–Base Breakdown Voltage
(I
C
= – 50
µA)
Collector Cutoff Current
(V
CB
= – 60 V)
Emitter cutoff current
(V
EB
= – 6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
Symbol
V
(BR)CEO
Min
– 50
–6
– 60
—
—
—
120
—
—
Typ
—
—
—
—
—
—
––
140
4.0
Max
—
—
—
– 0.1
– 0.1
-0.5
560
––
5.0
Unit
V
V
V
µA
µA
V
––
MHz
pF
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
Fig.1 Grounded emitter propagation characteristics
–50
Fig.2 Grounded emitter output characteristics( )
–10
–35.0
T
A
= 25°C
–31.5
–28.0
–24.5
–20
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
T
A
= 100°C
25°C
– 40°C
V
CE
= –10 V
–8
–10
–50
–6
–21.0
–17.5
–2
–1
–4
–14.0
–10.5
–0.5
–2
–7.0
–3.5µA
–0.2
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
0
0
–0.4
–0.8
–1.2
–1.6
I
B
=0
–2.0
V
BE
, BASE TO EMITTER VOLTAGE(V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
–100
Fig.4 DC current gain vs. collector current ( )
500
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
–80
T
A
= 25°C
h
FE
, DC CURRENT GAIN
–60
500
450
400
350
300
V
CE
= –5 V
–3V
–1V
200
–250
–200
–40
–150
–100
100
–20
–50
µA
I
B
=0
0
–1
–2
–3
–4
–5
50
0
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
500
–1
T
A
= 100°C
25°C
T
A
= 25°C
–0.5
h
FE
, DC CURRENT GAIN
–40°C
200
–0.2
I
C
/I
B
= 50
–0.1
100
20
10
50
–0.05
V
CE
= – 6V
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
–1
Fig.8 Gain bandwidth product vs. emitter current
1000
I
C
/I
B
= 10
–0.5
f
r
, TRANSITION FREQUENCY(MHz)
T
A
= 25°C
V
CE
= –12V
500
–0.2
200
–0.1
T
A
= 100°C
25°C
–40°C
100
–0.05
50
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
E
, EMITTER CURRENT (mA)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C
ob
, COLLECTOR OUTPUT CAPACITANCE( pF)
C
ib
, EMITTER INPUT CAPACITANCE (pF)
20
C
ib
10
T
A
= 25°C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ob
5
2
–0.5
–1
–2
–5
–10
–20
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SA1576AQT1G Series
S-L2SA1576AQT1G Series
SC-70/SOT-323
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
A1
GENERIC
MARKING DIAGRAM
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
XX
M
XX
M
1
= Specific Device Code
= Date Code
= Pb−Free Package
G
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
mm
inches
Rev.O 4/4
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