HB56UW1673E-F
Description
The HB 56UW 1673E belongs to 8-byte DI MM (D ual in-line Memory Module) fa mily , and have bee n
developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56UW1673E
is a 16 M
×
72 Dyna mic R AM Module, mounted 18 piec es of 64-Mbit DR AM (H M5165405) sea led in
TS OP pac kage and 2 piec es of 16-bit line drive r sea led in TS SOP pac kage . The HB 56UW 1673E off ers
Extende d Da ta Out (ED O) P age Mode as a high spee d ac ce ss mode. An outline of the HB 56UW 1673E is
168-pin socke t type pac kage (dua l lea d out). The ref ore, the HB 56UW 1673E make s high density mounting
possible without surface mount technology. The HB56UW1673E provides common data inputs and outputs.
Decoupling capacitors are mounted beside each TSOP on the its module board.
Features
•
168-pin socket type package (Dual lead out)
Lead pitch : 1.27 mm
•
Single 3.3 V supply : 3.3
±
0.3 V
•
High speed
Access time: t
RAC
= 50 ns/60 ns (max)
Access time: t
CAC
= 18 ns/20 ns (max)
•
Low power dissipation
Active mode: 8.46 W/7.16 W (max)
Standby mode (TTL): 166 mW (max)
•
Buffered input except
RAS
and DQ
•
4 byte interleave enabled, dual address input (A0/B0)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
EO
128MB Buffered EDO DRAM DIMM
16-Mword
×
72-bit, 4k Refresh, 1 Bank Module
(18 pcs of 16M
×
4 components)
E0101H10 (1st edition)
(Previous ADE-203-1123A (Z))
Jan. 31, 2001
L
od
Pr
uc
t
HB56UW1673E-F
•
JEDEC standard outline buffered 8-byte DIMM
•
EDO page mode capability
•
4096 refresh cycles: 64 ms
•
2 variations of refresh
RAS-only
refresh
Ordering Information
Type No.
HB56UW1673E-5F
HB56UW1673E-6F
Pin Arrangement
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
EO
CAS-before-RAS
refresh
50 ns
60 ns
Signal name Pin No.
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
Access time
Package
168-pin dual lead out
socket type
Contact pad
Gold
L
1 pin 10 pin 11 pin
40 pin 41 pin
84 pin
85 pin 94 pin 95 pin 124 pin 125 pin
Data Sheet E0101H10
2
od
Pr
168 pin
Signal name Pin No.
V
SS
85
Signal name Pin No.
V
SS
127
Signal name
V
SS
NC
NC
NC
NC
OE2
RE2
CE4
NC
86
87
88
89
DQ36
DQ37
DQ38
DQ39
128
129
130
131
WE2
V
CC
NC
NC
90
V
CC
132
PDE
V
CC
NC
NC
91
DQ40
133
92
93
DQ41
DQ42
134
135
uc
136
137
DQ54
DQ55
138
V
SS
139
DQ56
140
141
DQ57
DQ58
DQ18
DQ19
V
SS
DQ20
DQ21
DQ22
94
95
96
97
98
99
DQ43
DQ44
V
SS
DQ45
DQ46
DQ47
t
HB56UW1673E-F
Pin Description
Pin name
A0 to A11, B0
Function
Address input
Row address
A0 to A11, B0
Column address A0 to A11, B0
Refresh address A0 to A11, B0
Data input/output
Row address strobe (RAS)
Column address strobe (CAS)
Read/Write enable
Output enable
Presence detect
DQ0 to DQ71
RE0, RE2
CE0, CE4
OE0, OE2
WE0, WE2
PD1 to PD8
ID0, ID1
PDE
V
CC
V
SS
NC
Presence Detect Pin Assignment
(Controlled by
PDE
pin)
PDE
= Low
Pin name
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
Pin No.
79
163
80
164
81
165
82
166
50 ns
1
1
1
1
1
0
0
0
60 ns
1
1
1
1
1
1
1
0
1 : High level (driver output)
0 : Low level (driver output)
EO
L
ID bit
Ground
Presence detect Enable
Power supply
Data Sheet E0101H10
4
od
Pr
No connection
All
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
PDE
= High
uc
t
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
