INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 July 2002.
MIL-PRF-19500/397G
1 April 2002
SUPERSEDING
MIL-PRF-19500/397F
21 April 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON
TYPES 2N3743, 2N4930, AND 2N4931
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500
* 1.2 Physical dimensions. See figure 1 (TO-39) and figures 2 and 3 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings.
Type
P
T
(1)
T
A
= +25°C
W
1.0
1.0
1.0
P
T
(2)
T
C
= +25°C
W
5
5
5
V
CBO
V
EBO
V
CEO
I
C
T
J
and T
STG
2N3743
2N4930
2N4931
V dc
300
200
250
V dc
5
5
5
V dc
300
200
250
mA dc
200
200
200
°C
-65 to +200
-65 to +200
-65 to +200
(1) Derate linearly at 5.71 mW/°C above T
A
> +25°C.
(2) Derate linearly at 28.6 mW/°C above T
C
> +25°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement
Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/397G
1.4 Primary electrical characteristics at T
A
= +25°C.
Limits
|h
fe
|
I
C
= 10 mA dc
V
CE
= 20 V dc
f = 20 MHz
h
FE1
(1)
I
C
= 0.1 mA dc
V
CE
= 10 V dc
h
FE4
(1)
I
C
= 30 mA dc
V
CE
= 10 V dc
V
BE(sat)2
(1)
I
C
= 30 mA
dc
I
B
= 3 mA dc
V dc
V
CE(sat)1
(1)
I
C
= 30 mA dc
I
B
= 3 mA dc
V dc
1.2
C
obo
I
E
= 0
V
CB
= 20 V dc
f
≥
0.1 MHz
pF
15
Min
Max
2.0
8.0
30
50
200
1.2
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein (except for related associated specifications or specification sheets), the text of this document takes
precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
2
MIL-PRF-19500/397G
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.12
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.019
0.41
0.48
0.500 0.750
12.7
19.0
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.029
.045
0.74
1.14
.028
.034
0.71
0.86
.010
0.25
45° TP
45° TP
Note
7
8,9
8,9
8,9
8,9
6
5
3,4
3, 4
1.
2.
3.
4.
5.
6.
7.
NOTES:
Dimension are in inches.
Metric equivalents are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The
device may be measured by direct methods or by the gauge and gauging procedure.
8. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in L
1
and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (TO-39).
3
MIL-PRF-19500/397G
Letter
Inches
A
C
Min
.041
.041
Max
.041
.041
Dimensions
Millimeters
Min
1.04
1.04
Max
1.04
1.04
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die are:
Thickness:
.006 inch (0.15 mm) to .012 inch (0.30 mm).
Top metal:
Aluminum 17,500 Å minimum, 20,000 Å nominal.
Back metal:
Gold 2,500 Å minimum, 3,000 Å nominal.
Back side:
Collector.
Bonding pad: B = .004 inch (0.10 mm) x .005 inch (0.13 mm).
E = .004 inch (0.10 mm) x .0055 inch (0.14 mm).
FIGURE 2. JANHC and JANKC (A-version) die dimensions.
4
MIL-PRF-19500/397G
1.
2.
3.
4.
Chip size:
Chip thickness:
Top metal:
Back metal:
5. Backside:
6. Bonding pad:
40 x 40 mils
±
1 mil.
10
±
1.5 mil.
Aluminum 15,000Å minimum, 18,000Å nominal.
A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅ min.,15kÅ/5kÅ/10kÅ/10kÅ nom.
B. Gold 2,500Å minimum, 3,000Å nominal.
C. Eutectic Mount – No Gold.
Collector
B = 6 x 8 mils, E = 6 x 4 mils.
FIGURE 3. JANHC and JANKC (B-version) die dimensions.
5
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