Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | NEC(日电) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 外壳连接 | ISOLATED |
| 最大集电极电流 (IC) | 6 A |
| 集电极-发射极最大电压 | 100 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 1000 |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 110 MHz |
| Base Number Matches | 1 |
| 2SD2165L | 2SD2165K | 2SD2165 | 2SD2165M | |
|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 最大集电极电流 (IC) | 6 A | 6 A | 6 A | 6 A |
| 集电极-发射极最大电压 | 100 V | 100 V | 100 V | 100 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 1000 | 1600 | 500 | 800 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | AMPLIFIER | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 110 MHz | 110 MHz | 110 MHz | 110 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
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