LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
(32V, 0.8A)
L2SD1781KQLT1G
FFeatures
1) Very low V
CE(sat)
.
V
CE(sat)
t
0.4 V (Typ.)
(I
C
/ I
B
= 500mA / 50mA)
2) High current capacity in compact
package.
3) Complements the
L2SB1197KXLT1G
L2SD1781KQLT1G Series
S-L2SD1781KQLT1G Series
3
1
2
SOT-23 /TO-236AB
4)
We declare that the material of product compliance with RoHS requirements.
5)
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
FStructure
Epitaxial planar type
NPN silicon transistor
FAbsolute
maximum ratings (Ta = 25_C)
1
BASE
2
EMITTER
COLLECTOR
3
ORDERING INFORMATION
Device
L2SD1781KQLT1G
S-L2SD1781KQLT1G
L2SD1781KQLT3G
S-L2SD1781KQLT3G
L2SD1781KRLT1G
S-L2SD1781KRLT1G
L2SD1781KRLT3G
S-L2SD1781KRLT3G
Marking
AFQ
AFQ
AFR
AFR
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series
S-L2SD1781KQLT1G Series
FElectrical
characteristics (Ta = 25_C)
DEVICE MARKING
L2SD1781KQLT1G=AFQ
L2S1781KRLT1G=AFR
ltem
h
FE
Q
120~270
R
180~390
Electrical characteristic curves
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series
S-L2SD1781KQLT1G Series
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series
S-L2SD1781KQLT1G Series
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
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