Product Bulletin JANTX, JANTXV, 2N6989U
January 1996
Surface Mount Quad NPN Transistor
Type JANTX, JANTXV, 2N6989U
Features
•
Ceramic surface mount package
•
Hermetically sealed
•
Small package minimizes circuit board
area required
•
Electrical performance similar to a
2N2222A
•
Qualification per MIL-PRF-19500/559
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 V
Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Operating Junction Temperature(T
J
) . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Storage Junction Temperature (T
stg
) . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Power Dissipation T
A
= 25
o
C (four devices driven equally) . . . . . . . . . . . . . . . 1.0 W
(1)
Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 Vdc
Notes:
(1) Derate linearly 8.57 mW/
o
C above 25
o
C.
Description
The JANTX2N6989U is a hermetically
sealed, ceramic surface-mount device,
consisting of four individual silicon NPN
transistors. The 20 pin ceramic package
is ideal for designs where board space
and device weight are important design
considerations.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is V
CB
= 30 V, P
D
= 250
mW each transistor, T
A
= 25
o
C. Refer
to MIL-PRF-19500/559 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-20
(972)323-2200
Fax (972)323-2396
Type JANTX, JANTXV, 2N6989U
Electrical Characterics
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CBO2
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
CE(SAT)1
V
CE(SAT)2
V
CE(SAT)3
V
BE(SAT)1
V
BE(SAT)2
V
BE(SAT)3
h
fe
h
fe
C
obo
C
ibo
t
on
t
off
R
t-t
PARAMETER
MIN MAX UNITS
75
50
6
10
10
10
50
75
100
100
30
35
0.3
1.0
0.45
0.6
1.2
2.0
1.4
V
V
V
V
V
V
300
325
V
V
V
nA
µA
nA
I
C
= 10
µA
I
C
= 10 mA
(2)
I
E
= 10
µA
V
CB
= 60 V
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Small-Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance
Turn-On Time
Turn-Off Time
Isolation Resistance
V
CB
= 60 V, T
A
= 150
o
C
V
EB
= 4 V
V
CE
= 10 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
(2)
V
CE
= 10 V, I
C
= 150 mA
(2)
V
CE
= 10 V, I
C
= 500 mA
(2)
V
CE
= 10 V, I
C
= 10 mA, T
A
= 55
o
C
(2)
I
C
= 150 mA, I
B
= 15 mA
(2)
I
C
= 500 mA, I
B
= 50 mA
(2)
I
C
= 150 mA, I
B
= 15 mA, T
A
= 150
o
C
(2)
I
C
= 150 mA, I
B
= 15 mA
(2)
I
C
= 500 mA, I
B
= 50 mA
(2)
I
C
= 150 mA, I
B
= 15 mA, T
A
= 55
o
C
(2)
V
CE
= 10 V, I
C
= 20 mA, f = 100 MHz
V
CE
= 10 V, I
C
= 1 mA, f = 1kHz
On Characteristics
Small-Signal Characteristics
2.5
50
8
33
35
300
10k
pF
pF
ns
ns
MΩ
8.0
V
CB
= 10 V, I
E
= 0, 100 kHz
≤
f
≤
1 MHz
V
EB
= 0.5 V, I
C
= 0, 100 kHz
≤
f
≤
1 MHz
V
CC
= 30 V, I
C
= 150 mA, I
B
= 15 mA
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA
V
t-t
= 500 V
Switching Charateristics
Transistor to Transistor Isolation
(2) Pulsed Test: Pulse Width = 300
µs ±50,
1-2 % Duty Cycle.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-21
(972)323-2200
Fax (972)323-2396
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