2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/596
100V Thru 500V, Up to 28A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
FEATURES
•
•
•
•
•
•
Repetitive Avalanche Rating
Isolated and Hermetically Sealed
Low R
DS(on)
Ease of Paralleling
Ceramic Feedthroughs
Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I i
ts
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
plecrut.
us icis
PRIMARY ELECTRICAL CHARACTERISTICS @ T
C
= 25
°
C
PART NUMBER
2N7218
2N7219
2N7221
2N7222
V
DS,
Vo t
ls
100
200
400
500
R
DS(on)
.070
.8
1
.5
5
.5
8
I
,
A m p s
D
28
18
10
8
S C H E M ATIC
MECHANICAL OUTLINE
.545
.535
.144 DIA.
.050
.040
.685
.665
.800
.790
.550
.530
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1
2
3
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
.150 TYP.
7 03 R0
31 - 1
.
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7218
28
20
112
125
10
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
250
2
8
4
4
12.5
4
mJ
°C
°C
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
100
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 2 A
3
0 ,
0
V
G S
= 1 V I
D
= 2 A
3
0 ,
8
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 8 V V
G S
= 0V
0 ,
V
D S
= 8 V V
G S
= 0 , T
J
= 125°C
0 ,
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 28A
0 ,
V
D S
= 50 V
See note 4
V
D D
= 5 V I
D
= 20A, R
G
=9.1
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.077
0.125
40
.
25
250
100
-100
59
16
30.7
21
105
64
65
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
V
S D
Diode Forward Voltage
-
-
-
t
Reverse Recovery Time
-
-
-
t
r
r
Typ.
-
-
-
-
-
-
Max.
15
.
400
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 28A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 28A,d/t<100A/µs
3
5C
id
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
10
.
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
5, trig
C
8
@V
D D
= 2 V S a t n T
J
= 25° , L > 4 0 µH, R
G
= 25 , Peak I
L
= 28A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7219
18
11
72
125
10
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
450
1
8
4
4
12.5
4
mJ
°C
°C
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
200
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 1 A
3
0 ,
1
V
G S
= 1 V I
D
= 1 A
3
0 ,
8
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 160 V, V
G S
= 0V
V
D S
= 160 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 18A
0 ,
V
D S
= 100 V
See note 4
V
D D
= 1 0 V I
D
= 11A, R
G
=9.1
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.18
0.25
40
.
25
250
100
-100
60
10.6
37.6
20
105
58
67
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
15
.
500
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 18A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 18A,d/t<100A/µs
3
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
10
.
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0, trig
C
.
@V
D D
= 5 V S a t n T
J
= 25° , L > 21 mH, R
G
= 25 , Peak I
L
= 18A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7221
10
60
.
40
125
10
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
650
1
0
4
4
12.5
4
mJ
°C
°C
-55 to 150
300 (.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
400
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 6.0 A
3
0 ,
V
G S
= 1 V I
D
= 1 A
3
0 ,
0
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 320 V, V
G S
= 0V
V
D S
= 320 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 10A
0 ,
V
D S
= 200 V
See note 4
V
D D
= 2 0 V I
D
= 6A, R
G
= 9.1
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.55
0.70
40
.
25
250
100
-100
65
10
40.5
25
92
79
58
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
15
.
600
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 10A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 10A,d/t<100A/µs
3
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
10
.
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0, trig
C
14
@V
D D
= 5 V S a t n T
J
= 25° , L > 1 . mH, R
G
= 25 , Peak I
L
= 10A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7222
80
.
50
.
32
125
10
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
700
80
.
12.5
4
4
4
mJ
°C
°C
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
500
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 5 0 A
3
0 ,
.
V
G S
= 1 V I
D
= 8 0 A
3
0 ,
.
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 400 V, V
G S
= 0V
V
D S
= 400 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 8.0A
0 ,
V
D S
= 250 V
See note 4
V
D D
= 2 0 V I
D
= 5.0A, R
G
= 9.1
5 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.85
0.95
40
.
25
250
100
-100
68.5
12.5
42.4
21
73
72
51
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
15
.
700
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 8.0A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 8.0A,d/t<100A/µs
3
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
10
.
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0, trig
C
A
@V
D D
= 5 V S a t n T
J
= 25° , L > 20 mH, R
G
= 25 , Peak I
L
= 8
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/596
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