2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,
QUALIFIED TO MIL-PRF-19500/543
100V Thru 500V, Up to 38A, N-Channel,
Enhancement Mode MOSFET Power Transistor
FEATURES
• Low R
DS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/543
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. I i i e l y s i e f r
t s dal utd o
Military requirements where small size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ T
C
= 25
°
C
PART NUMBER
2N6764
2N6766
2N6768
2N6770
V
DS,
Vo t
ls
100
200
400
500
R
DS(on)
.055
.085
.0
3
.0
4
I
,
A m p s
D
38
30
14
12
S C H E M ATIC
1.53
REF.
0.875
MAX.
0.135
MAX.
MECHANICAL OUTLINE
1.197
1.177
0.675
0.655
0.440
0.420
0.188 R.
MAX.
0.450
0.250
0.312
MIN.
SEATING
PLANE
0.043
0.038
0.225
0.205
0.161
0.151
0.525 R.
MAX.
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
2 PLCS.
Note: For part number 2N6764 and 2N6766 the mechanical dimensions are the same as above
except the lead diameter is 0.058 min to 0.063 max.
7 03 R0
2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6764
38
24
152
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Operating Junction
Storage Temperature Range
Lead Temperature
150
3
8
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
100
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
50
8
25
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 2 A
3
0 ,
4
V
G S
= 1 V I
D
= 3 A
3
0 ,
8
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 8 V V
G S
= 0V
0 ,
V
D S
= 8 V V
G S
= 0 , T
J
= 125°C
0 ,
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 38A
0 ,
V
D S
= 50 V
See note 4
V
D D
= 5 V I
D
= 38A, R
G
=2.35
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.055
0.065
40
.
25
250
100
-100
125
22
65
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
19
.
500
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 38A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 38A,d/t< 100A/µs
3
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
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0, trig
C
0
@V
D D
= 5 V S a t n T
J
= 25° , L = 1 0 µH + 10%, R
G
= 25 , Peak I
L
= 38A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6766
30
19
120
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Operating Junction
Storage Temperature Range
Lead Temperature
6
0
3
0
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
200
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
55
8
30
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 1 A
3
0 ,
9
V
G S
= 1 V I
D
= 3 A
3
0 ,
0
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 160 V, V
G S
= 0V
V
D S
= 160 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 30A
0 ,
V
D S
= 100V
See note 4
V
D D
= 1 0 V I
D
= 30A, R
G
=2.35
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
.085
.090
40
.
25
250
100
-100
115
22
60
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
19
.
950
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 30 A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 30 A,d/t<100A/µs
3
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0 , trig
C
0
0
@V
D D
= 5 V S a t n T
J
= 25° , L = 1 0 µH + 10%, R
G
= 25 , Peak I
L
= 3 A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6768
14
90
.
56
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Operating Junction
Storage Temperature Range
Lead Temperature
1.
13
1
4
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
400
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
52
50
.
25
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 9 0 A
3
0 ,
.
V
G S
= 1 V I
D
= 1 A
3
0 ,
4
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 320 V, V
G S
= 0V
V
D S
= 320 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 14A
0 ,
V
D S
= 200 V
See note 4
V
D D
= 2 0 V I
D
= 14 A, R
G
= 2.35
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
.300
.400
40
.
25
250
100
-100
110
18
65
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
17
.
1200
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 14 A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 14 A,d/t<100A/µs
3
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0 , trig
C
0
4
@V
D D
= 5 V S a t n T
J
= 25° , L = 1 0 µH + 10%, R
G
= 25 , Peak I
L
= 1 A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6770
12
7.75
48
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Operating Junction
Storage Temperature Range
Lead Temperature
80
.
1
2
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
500
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
55
50
.
27
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 7 7 A
3
0 ,
.5
V
G S
= 1 V I
D
= 1 A
3
0 ,
2
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 400 V, V
G S
= 0V
V
D S
= 400V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 12 A
0 ,
V
D S
= 250 V
See note 4
V
D D
= 2 0 V I
D
= 12 A, R
G
= 2.35
5 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
.400
.500
40
.
25
250
100
-100
120
19
70
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
17
.
1600
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 12A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 12A,d/t<100A/µs
3
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0 , trig
C
0
@V
D D
= 5 V S a t n T
J
= 25° , L = 1 0 µH + 10%, R
G
= 25 , Peak I
L
= 12A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/543
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