The documentation and process conversion measures
necessary to comply with this document shall be
completed by 17 May 2010.
INCH-POUND
MIL-PRF-19500/393J
17 February 2010
SUPERSEDING
MIL-PRF-19500/393H
9 June 2008
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER,
TYPES 2N3418, 2N3418S, 2N3418U4, 2N3419, 2N3419S, 2N3419U4, 2N3420, 2N3420S,
2N3420U4, 2N3421, 2N3421S, AND 2N3421U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP,
JANSL, JANSR, JANSF, JANSG, JANSH, JANHCC, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL,
JANKCCR, JANKCCF, JANKCCG, AND JANKCCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1. Scope. This specification covers the performance requirements for NPN, silicon, transistors for use in
medium power switching applications. Four levels of product assurance are provided for each device type, and two
levels of product assurance for die (element evaluation) are provided, as specified in MIL-PRF-19500. RHA level
designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have
passed RHA requirements.
* 1.2. Physical dimensions. See figure 1 (similar to TO-5 for long leaded devices and TO-39 for short leaded
devices), figure 2 for JANHC and JANKC (die), and figure 3 (2N3418U4 through 2N3421U4) dimensions.
*
1.3 Maximum ratings, unless otherwise specified T
A
= +25°C.
Type
P
T
T
A
=
+25°C (1)
W
2N3418, 2N3418S
2N3418U4
2N3419, 2N3419S
2N3419U4
2N3420, 2N3420S
2N3420U4
2N3421, 2N3421S
2N3421U4
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
P
T
T
C
=
+100°C (1)
W
5
15
5
15
5
15
5
15
V
CBO
V
CEO
V
EBO
I
C
I
C
(2)
A dc
5
5
5
5
5
5
5
5
T
STG
and T
J
°C
-65 to
+200
-65 to
+200
-65 to
+200
-65 to
+200
R
θJA
(3)
°C/W
175
175
175
175
175
175
175
175
R
θJC
(3)
°C/W
18
4.5
18
4.5
18
4.5
18
4.5
V dc
85
85
125
125
85
85
125
125
V dc
60
60
80
80
60
60
80
80
V dc
8
8
8
8
8
8
8
8
A dc
3
3
3
3
3
3
3
3
*
*
(1) For derating, see figure 4 through figure 6.
(2) This value applies for t
p
≤
1 ms, duty cycle
≤
50 percent.
(3) For thermal impedance curves see figures 7, 8, and 9.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
https://assist.daps.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/393J
1.4. Primary electrical characteristics at T
A
= +25°C.
Limits
h
FE2
(1)
V
CE
= 2 V dc
I
C
= 1 A dc
h
FE4
(1)
V
CE
= 5 V dc
I
C
= 5 A dc
V
CE(sat)
V
BE(sat)
(1)
I
C
=
1 A dc
I
B
=
0.1 A
dc
|h
fe
|
V
CE
= 10
V dc
I
C
=
0.1 A dc
f = 20
MHz
2N3418
2N3418S
2N3418U4
2N3419
2N3419S
2N3419U4
Min
Max
20
60
2N3420
2N3420S
2N3420U4
2N3421
2N3421S
2N3421U4
40
120
2N3418
2N3418S
2N3418U4
2N3419
2N3419S
2N3419U4
10
2N3420
2N3420S
2N3420U4
2N3421
2N3421S
2N3421U4
V dc
15
0.25
V dc
0.6
1.2
pF
1.3
8
150
C
obo
V
CB
= 10
V dc
I
E
= 0
100 kHz
≤
f
≤
1 MHz
(1)
I
C
=
1 A dc
I
B
=
0.1 A dc
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch
or
https://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/393J
Symbol
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.021
0.41
0.53
.500
.750
12.7
19.05
See notes 7, 13, 14
.050
1.27
.250
.100
.040
.029
.045
.028
.034
.010
45° TP
6.35
2.54
1.02
0.74
1.14
0.71
.86
0.25
45° TP
Note
6
7
7
7
5
4
3,10
9,10
11
6
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating
plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct
methods or by gauge.
7. Symbol LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in L
1
and beyond LL minimum.
8. Lead number 3 is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .021 inch (0.53 mm).
10. Lead number 4 omitted on this variation.
11. Symbol r applied to both inside corners of tab.
12. For transistor types 2N3418S, 2N3419S, 2N3420S, 2N3421S, LL is .500 (12.70 mm) minimum and
.750 (19.05 mm) maximum.
13. For transistor types 2N3418, 2N3419, 2N3420, 2N3421, LL is 1.500 (38.10 mm) minimum, and 1.750
(44.45 mm) maximum.
14. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
15. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
FIGURE 1. Physical dimensions.
3
MIL-PRF-19500/393J
1.
2.
3.
4.
5.
6.
Chip size:
Chip thickness:
Top metal:
Back metal:
Backside:
Bonding pad:
.075 x .075 inch
±.002
inches (1.905 x 1.905 mm ±0.051 mm).
.014
±.003
inch nominal (0.356 ±0.0762 mm).
Aluminum110,000 Å minimum, 125,000 Å nominal.
Al/Ti/Ni/Au 10,000 Å minimum, 12,500 Å nominal.
Collector.
B = .014 x .014 inch (0.3556 x 0.3556 mm), E = .014 x .014 inch (0.3556 x 0.3556 mm).
* FIGURE 2. JANHCC and JANKCC-version die dimensions.
4
MIL-PRF-19500/393J
BW
CH
LW1
1
U4
BL
Q2
LW2
(2X)
LL1
Q1 (2X)
2
3
LL2 (2X)
LS2
LH
(3X)
Ls1
Symbol
Inches
BL
BW
CH
LH
LW1
LW2
LL1
LL2
LS1
LS2
Q1
Q2
Term 1
Term 2
Term 3
Min
.215
.145
.049
.135
.047
.085
.045
.070
.035
.030
.020
Collector
Base
Emitter
Max
.225
.155
.075
.020
.145
.057
.125
.075
.095
.048
.070
.035
Dimensions
Millimeters
Min
5.46
3.68
1.24
3.43
1.19
2.16
1.14
1.78
0.890
0.76
0.510
Max
5.72
3.94
1.91
0.51
3.68
1.45
3.17
1.91
2.41
1.21
1.78
0.890
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
* FIGURE 3. Physical dimensions and configuration (U4).
5
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