HM5164805F Series
HM5165805F Series
EO
Description
Features
64 M EDO DRAM (8-Mword
×
8-bit)
8 k Refresh/4 k Refresh
E0098H10 (1st edition)
(Previous ADE-203-1057C (Z))
Jan. 31, 2001
The HM5164805F S erie s, HM5165805F S erie s ar e 64M-bit dynamic R AMs orga nized as 8, 388,608-w ord
×
8-bit. The y have re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology.
HM5164805F S erie s, HM5165805F S erie s off er Extende d Da ta Out (ED O) P age Mode as a high spee d
ac ce ss mode. The y have the pac kage var iation of standa rd 32-pin plastic S OJ and standa rd 32-pin plastic
TSOPII.
•
Single 3.3 V supply: 3.3 V ± 0.3 V
•
Access time: 50 ns/60 ns (max)
•
Power dissipation
Active: 414 mW/378 mW (max) (HM5164805F Series)
: 486 mW/414 mW (max) (HM5165805F Series)
Standby : 1.8 mW (max) (CMOS interface)
: 1.1 mW (max) (L-version)
•
EDO page mode capability
•
Refresh cycles
RAS-only
refresh
8192 cycles /64 ms (HM5164805F, HM5164805FL)
4096 cycles /64 ms (HM5165805F, HM5165805FL)
CBR/Hidden refresh
4096 cycles /64 ms (HM5164805F, HM5164805FL, HM5165805F, HM5165805FL)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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HM5164805F Series, HM5165805F Series
•
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
EO
Ordering Information
Type No.
HM5164805FJ-5
HM5164805FJ-6
HM5164805FLJ-5
HM5164805FLJ-6
HM5165805FJ-5
HM5165805FJ-6
HM5165805FLJ-5
HM5165805FLJ-6
HM5164805FTT-5
HM5164805FTT-6
HM5164805FLTT-5
HM5164805FLTT-6
HM5165805FTT-5
HM5165805FTT-6
HM5165805FLTT-5
HM5165805FLTT-6
2
•
Battery backup operation (L-version)
Access time
50 ns
60 ns
50 ns
60 ns
50 ns
60 ns
50 ns
60 ns
50 ns
60 ns
50 ns
60 ns
50 ns
60 ns
50 ns
60 ns
Package
400-mil 32-pin plastic SOJ
(CP-32DC)
L
Data Sheet E0098H10
o
Pr
400-mil 32-pin plastic TSOP II
(TTP-32DC)
du
ct
stm32/stm8
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