电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HM538253BJ-7

产品描述2 M VRAM (256-kword x 8-bit) Hyper Page Mode (HM538254B)
产品类别存储    存储   
文件大小446KB,共56页
制造商ELPIDA
官网地址http://www.elpida.com/en
下载文档 详细参数 全文预览

HM538253BJ-7概述

2 M VRAM (256-kword x 8-bit) Hyper Page Mode (HM538254B)

HM538253BJ-7规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ELPIDA
零件包装代码SOJ
包装说明SOJ, SOJ40,.44
针数40
Reach Compliance Codeunknow
ECCN代码EAR99
访问模式FAST PAGE
最长访问时间70 ns
其他特性RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT
JESD-30 代码R-PDSO-J40
JESD-609代码e0
长度25.8 mm
内存密度2097152 bi
内存集成电路类型VIDEO DRAM
内存宽度8
功能数量1
端口数量2
端子数量40
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX8
封装主体材料PLASTIC/EPOXY
封装代码SOJ
封装等效代码SOJ40,.44
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
座面最大高度3.76 mm
最大待机电流0.007 A
最大压摆率0.21 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式J BEND
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度10.16 mm

文档预览

下载PDF文档
EO
Description
Features
HM538253B Series
HM538254B Series
2 M VRAM (256-kword
×
8-bit)
Hyper Page Mode (HM538254B)
The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword
×
8-bit dynamic
RAM and a 512-word
×
8-bit SAM (full-sized SAM). Its RAM and SAM operate independently and
asynchronously. The HM538253B/HM538254B is upwardly compatible with the HM534253B/HM538123B
except that the pseudo-write-transfer cycle is replaced with masked-write-transfer cycle, which has been
approved by JEDEC. Furthermore, several new features have been added to the HM538253B/HM538254B
which do not conflict with the conventional features. The stopping column feature realizes allows greater
flexibility for split SAM register lengths. Persistent mask is also installed according to the TMS34020
features. The HM538254B has Hyper page mode which enables fast page cycle.
Multiport organization:RAM and SAM can operate asynchronously and simultaneously:
RAM: 256-kword
×
8-bit
SAM: 512-word
×
8-bit
Access time
RAM: 70 ns/80 ns/100 ns max
SAM: 20 ns/23 ns/25 ns max
Cycle time
RAM: 130 ns/150 ns/180 ns min
SAM: 25 ns/28 ns/30 ns min
Low power
Active
RAM: 605 mW/550 mW/495 mW
SAM: 358 mW/330 mW/303 mW
Standby 38.5 mW max
Masked-write-transfer cycle capability
Stopping column feature capability
Persistent mask capability
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
LP
E0163H10 (Ver. 1.0)
(Previous ADE-203-264A/265 (Z))
Jul. 6, 2001 (K)
ro
du
ct

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1057  1091  347  1038  46  1  29  42  10  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved