HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Features
Noise Figure: <5 dB
P1dB: +7 dBm
Gain: 13 dB
Supply Voltage: +2.4V
50 Ohm Matched Input/Output
Die Size: 3.2 x 1.6 x 0.1 mm
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
This HMC-ALH508 is ideal for:
• Short Haul / High Capacity Links
• Wireless LANs
• Automotive Radar
• Military & Space
• E-Band Communication Systems
Functional Diagram
General Description
The HMC-ALH508 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
71 and 86 GHz. The HMC-ALH508 features 13 dB
of small signal gain, 4.5 dB of noise figure and an
output power of +7 dBm at 1dB compression from
two supply voltages at 2.1V and 2.4V respectively.
All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully pass-
ivated for reliable operation. This versatile LNA is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifi cations
[1]
, T
A
= +25° C
Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA
[2]
Parameter
Frequency Range
Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Total Supply Current (Idd1+Idd2+Idd3)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Idd
total
= 30 mA
11
Min.
Typ.
71 - 86
13
4.5
8
10
7
30
Max.
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 210
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Linear Gain vs. Frequency
18
16
Noise Figure vs. Frequency
8
7
NOISE FIGURE (dB)
6
5
4
3
2
1
0
1
LOW NOISE AMPLIFIERS - CHIP
14
GAIN (dB)
12
10
8
6
4
2
0
70
72
74
76
78
80
82
84
86
88
90
FREQUENCY (GHz)
74
76
78
80
82
84
86
88
90
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-2
-4
RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
-20
70
72
74
76
78
80
82
84
86
88
90
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-2
-4
RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
-20
70
72
74
76
78
80
82
84
86
88
90
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 21
HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+3 Vdc
-1 to +0.3 Vdc
-5 dBm
195.6 °C/W
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-1 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 212
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
Interface Schematic
1
LOW NOISE AMPLIFIERS - CHIP
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. See assembly for
required external components.
5
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
6-8
Vgg1, Vgg2, Vgg3
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 21
HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Assembly Diagram
1 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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