HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Features
Output IP3: +31 dBm
P1dB: +22 dBm
Gain: 20 dB @ 20 GHz
Supply Voltage: +4.5V
50 Ohm Matched Input/Output
Die Size: 3.3 x 1.95 x 0.1 mm
Typical Applications
This HMC-APH196 is ideal for:
• Point-to-Point Radios
3
LINEAR & POWER AMPLIFIERS - CHIP
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
General Description
The HMC-APH196 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between 17 and 30 GHz. The HMC-APH196
provides 20 dB of gain at 20 GHz, and an output
power of +22 dBm at 1 dB compression from a +4.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-APH196
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data Shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifi cations
,
T
A
= +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 mA
[2]
Parameter
Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Supply Current (Idd1 + Idd2)
20
15
Min
Typ
17 - 24
20
17
25
22
31
400
20
14
Max
Min
Typ
24 - 27
17
17
23
22
31
400
20
11
Max
Min
Typ
27 - 30
16
17
23
22
31
400
Max
Units
GHz
dB
dB
dB
dBm
dBm
dBm
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd
total
= 400 mA
3 - 160
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Pulsed Gain vs. Frequency
25
Pulsed P1dB vs. Frequency
26
20
POUT (dBm)
GAIN (dB)
24
15
22
3
LINEAR & POWER AMPLIFIERS - CHIP
10
20
5
18
0
15
20
25
30
FREQUENCY (GHz)
16
15
20
25
30
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
15
20
25
30
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
15
20
25
30
FREQUENCY (GHz)
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vdd1 = Vdd2 = 4.5 V, Idd1 + Idd2 = 400 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 16
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
6 Vdc
-1 to +0.3 Vdc
10 dBm
35.7 °C/W
180 °C
-65 °C to +150 °C
-55 °C to +85 °C
176 mA
440 mA
3
LINEAR & POWER AMPLIFIERS - CHIP
RF Input Power
Thermal Resistance
(Channel to die bottom)
Channel Temperature
Storage Temperature
Operating Temperature
Drain Bias Current (stage 1)
Drain Bias Current (stage 2)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
Standard
GP-2 (Gel Pack)
[2]
[1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Alternate
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Interface Schematic
2, 4
Vgg1, Vgg2
3
LINEAR & POWER AMPLIFIERS - CHIP
3, 5
Vdd1, Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
6
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die bottom must be connected to RF/DC ground.
Die Bottom
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 16
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Assembly Diagram
3
LINEAR & POWER AMPLIFIERS - CHIP
Note 1: Bypass caps should be 100 pF ceramic (single-layer) placed no further than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3 - 164
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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