HMC-APH460
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER
AMPLIFIER, 27 - 31.5 GHz
Typical Applications
This HMC-APH460 is ideal for:
• Point-to-Point Radios
Features
Output IP3: +37 dBm
P1dB: +28 dBm
Gain: 14 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.10 x 1.26 x 0.1 mm
3
LINEAR & POWER AMPLIFIERS - CHIP
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
General Description
The HMC-APH460 is a two stage GaAs HEMT MMIC
0.5 Watt Power Amplifier which operates between
27 and 31.5 GHz. The HMC-APH460 provides
14 dB of gain, and an output power of +28 dBm at
1 dB compression from a +5V supply voltage. All
bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH460 GaAs HEMT MMIC
0.5 Watt Power Amplifier is compatible with conven-
tional die attach methods, as well as thermo-
compression and thermosonic wirebonding, making
it ideal for MCM and hybrid microcircuit applications.
All data Shown herein is measured with the chip in a
50 Ohm environment and contacted with RF probes.
Electrical Specifi cations
[1]
,
T
A
= +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA
[2]
Parameter
Frequency Range
Gain
Input Return Loss
Output Return Loss
Output power for 1dB Compression (P1dB)
Output Third Order Intercept (IP3)
Saturated Output Power (Psat)
Supply Current (Idd1+Idd2)
12
Min.
Typ.
27 - 31.5
14
7
10
28
37
30
900
Max.
Units
GHz
dB
dB
dB
dBm
dBm
dBm
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd1 = 300 mA, Idd2 = 600 mA
3 - 172
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH460
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER
AMPLIFIER, 27 - 31.5 GHz
Linear Gain vs. Frequency
18
16
Fixtured Pout vs. Frequency
41
39
POUT (dBm), IP3 (dB)
37
35
33
31
29
27
25
P1dB
P3dB
IP3@18dBm/Tone
14
GAIN (dB)
12
10
8
6
4
2
0
26
27
28
29
30
31
32
FREQUENCY (GHz)
3
LINEAR & POWER AMPLIFIERS - CHIP
26
27
28
29
30
31
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
Output Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
26
27
28
29
30
31
32
-5
-10
-10
-15
-15
-20
-20
-25
FREQUENCY (GHz)
-25
26
27
28
29
30
31
32
FREQUENCY (GHz)
Wideband Linear Gain vs. Frequency
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 17
HMC-APH460
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER
AMPLIFIER, 27 - 31.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
+5.5 Vdc
-1 to +0.3 Vdc
20 dBm
69.7 °C/W
-65 °C to + 150 °C
33 °C
*
63 °C
*
3
LINEAR & POWER AMPLIFIERS - CHIP
RF Input Power
Thermal Resistance Channel
to Die Bottom
Storage Temperature
Die Bottom Temperature for
MTTF of 10
6
Hours
Die Bottom Temperature for
MTTF of 10
5
Hours
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
* Maximum junction temperature for die bottom at 85 °C is
simulated to be 232 °C. MTTF in this condition is estimated
to be 5 x 10
4
hrs.
Outline Drawing
Die Packaging Information
Standard
GP-2 (Gel Pack)
[2]
[1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Alternate
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH460
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER
AMPLIFIER, 27 - 31.5 GHz
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled and matched to
50 Ohms.
This pad is AC coupled and matched to
50 Ohms.
Interface Schematic
2
RFOUT
3
LINEAR & POWER AMPLIFIERS - CHIP
3
Vdd1
Power Supply Voltage for the amplifier. See assembly for
required external components.
5
Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
4, 6
Vgg1, Vgg2
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 17
HMC-APH460
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER
AMPLIFIER, 27 - 31.5 GHz
Assembly Diagram
3
LINEAR & POWER AMPLIFIERS - CHIP
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
3 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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