HMC-AUH320
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
Typical Applications
This HMC-AUH320 is ideal for:
• Short Haul / High Capacity Links
Features
Gain: 16 dB @ 74 GHz
P1dB: +15 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.20 x 0.87 x 0.1 mm
3
LINEAR & POWER AMPLIFIERS - CHIP
• Wireless LAN Bridges
• Automotive Radar
• Military & Space
• E-Band Communication Systems
Functional Diagram
General Description
The HMC-AUH320 is a high dynamic range, four stage
GaAs HEMT MMIC Medium Power Amplifier which
operates between 71 and 86 GHz. The HMC-AUH320
provides 16 dB of gain at 74 GHz, and an output
power of +15 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-AUH320
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifi cations
,
T
A
= +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130 mA
[2]
Parameter
Frequency Range
Gain
Input Return Loss
Output Return Loss
Output power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Supply Current (Idd1+Idd2)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve Idd
1
= 40 mA, Idd
2
= 90 mA
10
Min.
Typ.
71 - 86
16
4
6
15
16
130
Max.
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 238
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH320
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
Linear Gain vs. Frequency
24
Fixtured Output Power vs. Frequency
22
20
POUT (dBm)
GAIN (dB)
18
3
P1dB
P3dB
Psat
16
14
12
10
8
70
72
74
76
78
80
82
84
86
88
FREQUENCY (GHz)
6
70
74
78
82
86
90
FREQUENCY (GHz)
Input Return Loss vs. Frequency
-2
Output Return Loss vs. Frequency
-2
OUTPUT RETURN LOSS (dB)
-6
-6
-10
-10
-14
-14
-18
70
72
74
76
78
80
82
84
86
88
FREQUENCY (GHz)
-18
70
72
74
76
78
80
82
84
86
88
FREQUENCY (GHz)
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vdd1 = Vdd2 = 4V and Idd1 = 40mA, Idd2 = 90mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 23
LINEAR & POWER AMPLIFIERS - CHIP
INPUT RETURN LOSS (dB)
HMC-AUH320
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
+4.5 Vdc
-0.8 to +0.3 Vdc
92.1 °C/W
180 °C
-65 °C to +150 °C
-55 °C to +85 °C
50 mA
100 mA
3
LINEAR & POWER AMPLIFIERS - CHIP
Thermal Resistance
(Channel to die bottom)
Channel Temperature
Storage Temperature
Operating Temperature
Drain Bias Current (Idd1)
Drain Bias Current (Idd2)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-2 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 240
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH320
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
Interface Schematic
3
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
4
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
5
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 24
LINEAR & POWER AMPLIFIERS - CHIP
HMC-AUH320
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
Assembly Diagram
3
LINEAR & POWER AMPLIFIERS - CHIP
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
3 - 242
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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