HMC-APH473
v03.0209
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 37 - 40 GHz
Typical Applications
This HMC-APH473 is ideal for:
• Point-to-Point Radios
Features
Output IP3: +37 dBm
P1dB: +28 dBm
Gain: 15 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.59 x 1.26 x 0.1 mm
3
LINEAR & POWER AMPLIFIERS - CHIP
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
General Description
The HMC-APH473 is a two stage GaAs HEMT
MMIC 0.6 Watt Power Amplifier which operates
between 37 and 40 GHz.
The HMC-APH473
provides 15 dB of gain, and an output power of
+28 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH473 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifi cations
[1]
,
T
A
= +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 1080 mA
[2]
Parameter
Frequency Range
Gain
Input Return Loss
Output Return Loss
Output power for 1dB Compression (P1dB)
Output Third Order Intercept (IP3)
Supply Current (Idd1+Idd2)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd
total
= 1080 mA
11
Min.
Typ.
37 - 40
15
10
14
28
37
1080
Max.
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 184
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH473
v03.0209
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 37 - 40 GHz
Fixtured Gain vs. Frequency
20
18
16
14
12
10
Fixtured Power vs. Frequency
40
38
POUT (dBm)
36
34
32
IP3@18dBm/Tone
P1dB
GAIN (dB)
3
40
41
28
26
8
36
37
38
39
40
41
FREQUENCY (GHz)
36
37
38
39
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
Output Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
-10
-15
-20
-25
-10
-15
-20
36
37
38
39
40
41
FREQUENCY (GHz)
-30
36
37
38
39
40
41
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 18
LINEAR & POWER AMPLIFIERS - CHIP
30
HMC-APH473
v03.0209
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 37 - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
+5.5 Vdc
-1 to +0.3 Vdc
600 mA
600 mA
19 dBm
25.8 °C/W
-65 to 150 °C
180 °C
3
LINEAR & POWER AMPLIFIERS - CHIP
Drain Bias Current (Idd1)
Drain Bias Current (Idd2)
RF Input Power
Thermal Resistance
(Channel to die bottom)
Storage Temperature
Channel Temperature
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-2 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 186
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH473
v03.0209
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 37 - 40 GHz
Pad Descriptions
Pad Number
Function
Description
This pad is AC coupled and matched to
50 Ohms.
Interface Schematic
1
RFIN
3
LINEAR & POWER AMPLIFIERS - CHIP
2
RFOUT
This pad is AC coupled and matched to
50 Ohms.
3, 5
Vdd1, Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
4, 6
Vgg1, Vgg2
Gate control for amplifier. Please follow “MMIC Amplifier
Biasing Procedure” application note. See assembly for
required external components.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 18
HMC-APH473
v03.0209
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 37 - 40 GHz
Assembly Diagram
3
LINEAR & POWER AMPLIFIERS - CHIP
3 - 188
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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