HMC397
v01.1007
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Typical Applications
An excellent cascadable 50 Ohm
Gain Block or LO Driver for:
• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C
3
I
• Space Telecom
Features
Gain: 15 dB
P1dB Output Power: +15 dBm
Stable Gain Over Temperature
50 Ohm I/O’s
Small Size: 0.38 x 0.58 x 0.1 mm
Functional Diagram
General Description
The HMC397 die is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC DC to
10 GHz amplifier. This amplifier can be used as either
a cascadable 50 Ohm gain stage or to drive the LO
of HMC mixers with up to +16dBm output power. The
HMC397 offers 15 dB of gain and an output IP3 of
+32 dBm while requiring only 56 mA from a +5V supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and yields
excellent gain stability over temperature while
requiring a minimal number of external bias com-
ponents. The HMC397 can easily be integrated into
Multi-Chip-Modules (MCMs) due to its small (0.22mm
2
)
size. All data is with the chip in a 50 Ohm test fixture
connected via 0.025mm (1 mil) diameter wire bonds of
minimal length 0.5mm (20 mils).
Electrical Specifi cations,
Vs= +5 V, Rbias= 22 Ohm, T
A
= +25° C
Parameter
Gain
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 10.0 GHz
DC - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 7.0 GHz
7.0 - 10.0 GHz
Min.
Typ.
15
14
12
0.004
0.015
0.02
15
14
15
13
18
16
15
13
10
30
24
22
4.5
6
56
Max.
Units
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
2 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC397
v01.1007
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
Gain & Return Loss
20
15
10
RESPONSE (dB)
Gain vs. Temperature
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
0
1
2
3
4
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
0
-5
-10
-15
-20
0
1
2
3
4
5
S11
S22
GAIN (dB)
5
S21
+25 C
+85 C
-55 C
6
7
8
9
10
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
+25 C
+85 C
-55 C
-5
+25 C
+85 C
-55 C
-10
-15
-15
-20
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
-20
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10
9
-5
NOISE FIGURE (dB)
+25 C
+85 C
-55 C
8
7
6
5
4
3
2
1
+25 C
+85 C
-55 C
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 15
HMC397
v01.1007
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Output P1dB vs. Temperature
20
18
16
14
P1dB (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Psat vs. Temperature
20
18
16
14
Psat (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Power Compression @ 1 GHz
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 7 GHz
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
Pout
Gain
PAE
-6
-4
-2
0
2
4
6
8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
32
30
28
26
IP3 (dBm)
24
22
20
18
16
14
12
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Gain, Power, Output IP3 & Supply
Current vs. Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
40
35
30
25
Icq (mA)
20
15
10
5
0
4.5
4.75
5
Vs(V)
5.25
Icq
Gain
P1dB
Psat
IP3
80
60
40
20
0
5.5
2 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC397
v01.1007
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Junction Temperature
Continuous Pdiss (T= 85 °C)
(derate 5.21 mW/°C above 85 °C)
Thermal Resistance
(junction to die bottom)
Storage Temperature
Operating Temperature
+7 Vdc
+10 dBm
150 °C
0.339 W
192 °C/W
-65 to +150 °C
-55 to +85 °C
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Die Packaging Information
[1]
Standard
GP-3
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 17
HMC397
v01.1007
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
2
RFOUT
RF output and DC Bias for the output stage.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
1000
56 nH
100 pF
3000
8.2 nH
100 pF
7000
2.2 nH
100 pF
2 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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