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HMC435MS8G

产品描述SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
产品类别无线/射频/通信    射频和微波   
文件大小208KB,共6页
制造商Hittite Microwave(ADI)
官网地址http://www.hittite.com/
下载文档 详细参数 选型对比 全文预览

HMC435MS8G概述

SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz

HMC435MS8G规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Hittite Microwave(ADI)
包装说明PLASTIC, SMT, MSOP-86, 6 PIN
Reach Compliance Codecompli
ECCN代码EAR99
1dB压缩点31 dBm
其他特性HIGH ISOLATION
特性阻抗50 Ω
构造COMPONENT
最大输入功率 (CW)30.97 dBm
最大插入损耗1.8 dB
最小隔离度30 dB
JESD-609代码e0
安装特点SURFACE MOUNT
功能数量1
端子数量8
最大工作频率4000 MHz
最小工作频率
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TSSOP8,.19
电源5 V
射频/微波设备类型SPDT
表面贴装YES
端子面层Tin/Lead (Sn/Pb)

文档预览

下载PDF文档
HMC435MS8G
/
435MS8GE
v03.0607
SPDT NON-REFLECTIVE
SWITCH, DC - 4.0 GHz
Typical Applications
The HMC435MS8G / HMC435MS8GE is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
Features
High Isolation: 60 dB @ 1 GHz
50 dB @ 2 GHz
Positive Control: 0/+5V
51 dBm Input IP3
Non-Reflective Design
MS8G SMT Package, 14.8 mm
2
9
SWITCHES - SMT
Functional Diagram
General Description
The HMC435MS8G & HMC435MS8GE are non-
reflective DC to 4 GHz GaAs MESFET SPDT switches
in low cost 8 lead MSOP8G surface mount packages
with exposed ground paddles. The switch is ideal
for cellular/PCS/3G basestation applications yielding
50 to 60 dB isolation, low 0.8 dB insertion loss and
+50 dBm input IP3. Power handling is excellent
up through the 3.5 GHz WLL band with the switch
offering a P1dB compression point of +31 dBm. On-
chip circuitry allows positive voltage control of 0/+5
Volts at very low DC currents.
Electrical Specifications,
T
A
= +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Insertion Loss
Frequency
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
60
ns
ns
56
46
43
37
30
15
13
11
16
27
48
45
41
Min.
Typ.
0.8
1.2
1.5
60
50
47
41
35
20
17
15
21
31
51
48
45
Max.
1.0
1.5
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
9 - 256
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC435MS8G相似产品对比

HMC435MS8G 435MS8GE HMC435MS8G_07
描述 SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz

 
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