HMC453QS16G
/
453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Features
Output IP3: +51 dBm
21.5 dB Gain @ 400 MHz
8 dB Gain @ 2100 MHz
45% PAE @ +32 dBm Pout
+25 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm
2
5
AMPLIFIERS - SMT
Typical Applications
The HMC453QS16G / HMC453QS16GE is ideal for
applications requiring a high dynamic range amplifier:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
Functional Diagram
General Description
The HMC453QS16G & HMC453QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1.6 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged
in a miniature 16 lead QSOP plastic package, the
amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +47 dBm at 0.4 GHz
or +51 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC453QS16G & HMC453QS16GE ideal power
amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed
Wireless applications.
Electrical Specifications,
T
A
= +25°C, Vs= +5V, VPD = +5V
[1]
Parameter
Frequency Range
Gain
Gain Variation Over
Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB
Compression (P1dB)
Saturated Output
Power (Psat)
Output Third Order
Intercept (IP3) [2]
Noise Figure
Supply Current (Icq)
Control Current (IPD)
44
29
19
Min.
Typ.
400 - 410
21.5
0.012
12
10
32
32.25
47
7
725
12
47
29
0.02
18
Max.
Min.
Typ.
450 - 496
20.5
0.012
15
10
32
32.25
50
8.5
725
12
46
29
0.02
12
Max.
Min.
Typ.
810 - 960
15
0.012
12
15
32
32.5
49
7
725
12
44
28.5
0.02
6
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
MHz
dB
0.02
dB /
°C
dB
dB
dBm
dBm
dBm
dB
mA
mA
1710 - 1990
9
0.012
10
13
31.5
32
50
7.5
725
12
48
30
0.02
6
2010 - 2170
8
0.012
15
18
33
33.5
51
6.5
725
12
[1] Specifications and data reflect HMC453QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
5 - 296
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G
/
453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 400 MHz
25
20
15
RESPONSE (dB)
S21
S11
S22
Gain vs. Temperature @ 400 MHz
24
23
22
21
20
GAIN (dB)
19
18
17
16
15
14
13
12
0.35
+25 C
+85 C
-40 C
5
AMPLIFIERS - SMT
10
5
0
-5
-10
-15
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
0
Output Return Loss
vs. Temperature @ 400 MHz
0
RETURN LOSS (dB)
-5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
-5
-10
-10
+25 C
-15
+85 C
-40 C
-15
0.35
0.37
0.39
0.41
0.43
0.45
-20
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature @ 400 MHz
34
33
32
31
P1dB (dBm)
30
29
28
27
26
25
24
0.35
0.37
0.39
0.41
0.43
0.45
+25 C
+85 C
-40 C
Psat vs. Temperature @ 400 MHz
34
33
32
31
Psat (dBm)
30
29
28
27
26
25
24
0.35
0.37
0.39
0.41
0.43
0.45
+25 C
+85 C
-40 C
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 29
HMC453QS16G
/
453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Noise Figure
vs. Temperature @ 400 MHz
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
+25 C
+85 C
-40 C
5
AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 400 MHz
52
50
48
46
OIP3 (dBm)
44
42
40
38
36
34
32
30
0.35
0.37
0.39
0.41
0.43
0.45
+25 C
+85 C
-40 C
0
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 400 MHz
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
-35
0.35
+25 C
+85 C
-40 C
Gain, Power & IP3
vs. Supply Voltage @ 400 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
55
50
45
40
35
30
25
20
15
10
4.5
Gain
P1dB
Psat
OIP3
0.37
0.39
0.41
0.43
0.45
4.75
5
Vs (Vdc)
5.25
5.5
FREQUENCY (GHz)
Power Compression @ 400 MHz
50
Pout (dBm), Gain (dB), PAE (%)
45
40
35
30
25
20
15
10
5
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout
Gain
PAE
ACPR vs. Supply Voltage @ 400 MHz
W-CDMA, 64 DPCH
-10
-15
-20
-25
ACPR (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
8
10
12
14
16
18
Source ACPR
4.5V
5V
5.5V
W-CDMA
Frequency: 400 MHz
Integration BW: 3.84 MHz
64 DPCH
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
5 - 298
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G
/
453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 470 MHz
25
20
15
RESPONSE (dB)
S21
S11
S22
Gain vs. Temperature @ 470 MHz
23
22
21
20
GAIN (dB)
19
18
17
16
15
14
+25C
+85C
-40C
5
AMPLIFIERS - SMT
10
5
0
-5
-10
-15
0.1
13
0.2
0.3
0.4
0.5
0.6
0.7
12
0.43
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 40 MHz
0
Output Return Loss
vs. Temperature @ 470 MHz
0
-2
+25C
RETURN LOSS (dB)
+85C
-40C
RETURN LOSS (dB)
-5
-4
-6
-8
-10
-12
+25C
+85C
-40C
-10
-15
-20
0.43
0.45
0.47
0.49
0.51
0.53
-14
0.43
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature @ 470 MHz
34
33
32
31
P1dB (dBm)
30
29
28
27
26
25
24
0.43
0.45
0.47
0.49
0.51
0.53
+25C
+85C
-40C
Psat vs. Temperature @ 470 MHz
34
33
32
31
Psat (dBm)
30
29
28
27
26
25
24
0.43
0.45
0.47
0.49
0.51
0.53
+25C
+85C
-40C
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 29
HMC453QS16G
/
453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Noise Figure
vs. Temperature @ 470 MHz
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
+25C
+85C
-40C
5
AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 470 MHz
58
56
54
52
OIP3 (dBm)
50
48
46
44
42
40
38
36
0.43
0.45
0.47
0.49
0.51
0.53
+25C
+85C
-40C
0
0.43
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 470 MHz
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
0.43
Gain, Power & IP3
vs. Supply Voltage @ 470 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
55
50
45
40
35
30
25
20
15
10
4.5
Gain
P1dB
Psat
OIP3
+25C
+85C
-40C
0.45
0.47
0.49
0.51
0.53
4.75
5
Vs (Vdc)
5.25
5.5
FREQUENCY (GHz)
Power Compression @ 470 MHz
55
Pout (dBm), Gain (dB), PAE (%)
50
45
40
35
30
25
20
15
10
5
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout
Gain
PAE
ACPR vs. Supply Voltage @ 470 MHz
W-CDMA, 64 DPCH
-10
-15
-20
-25
ACPR (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
8
10
12
14
16
18
Source ACPR
4.5V
5V
5.5V
W-CDMA
Frequency: 470 MHz
Integration BW: 3.84 MHz
64 DPCH
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
5 - 300
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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