HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
LINEAR & POWER AMPLIFIERS - CHIP
Typical Applications
The HMC459 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Features
P1dB Output Power: +25 dBm
Gain: 17 dB
Output IP3: +31.5 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
Functional Diagram
General Description
The HMC459 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 18 GHz. The amplifier provides 17 dB of gain,
+31.5 dBm output IP3 and +25 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is good making the
HMC459 ideal for EW, ECM and radar driver amplifier
applications. The HMC459 amplifier I/O’s are inter-
nally matched to 50 Ohms facilitating easy integration
into Multi-Chip-Modules (MCMs). All data is with the
chip in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length 0.31mm
(12 mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
(IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
21
16.5
Min.
Typ.
DC - 2.0
18.5
±0.5
0.02
22
27
24
26.5
40
4.0
290
20.5
0.03
15
Max.
Min.
Typ.
DC - 6.0
18
±0.75
0.02
19.5
15
24.5
26.5
34
4.0
290
22
0.03
14
Max.
Min.
Typ.
DC - 10.0
17
±0.75
0.03
19
14
25
26.5
31.5
3.0
290
14
0.04
0.035
10
14
17
21
26
6.5
290
0.045
9
Max.
Min
Typ
DC - 18.0
12
Max
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
3 - 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
Gain & Return Loss
25
20
15
RESPONSE (dB)
10
Gain vs. Temperature
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
0
2
4
6
8
3
LINEAR & POWER AMPLIFIERS - CHIP
0
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
GAIN (dB)
5
S21
S11
S22
+25 C
+85 C
-55 C
12
14
16
18
20
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
+25 C
+85 C
-55 C
-10
-15
-20
-25
-30
0
2
4
6
8
+25 C
+85 C
-55 C
-10
-15
-20
-25
-30
-35
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0.00001
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
RESPONSE (dB)
S21
S11
S22
+25 C
+85 C
-55 C
0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 41
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
LINEAR & POWER AMPLIFIERS - CHIP
Output P1dB vs. Temperature
30
28
26
24
P1dB (dBm)
22
20
18
16
14
12
10
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Output Psat vs. Temperature
30
28
26
24
Psat (dBm)
22
20
18
16
14
12
10
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Output IP3 vs. Temperature
44
42
40
38
36
IP3 (dBm)
34
32
30
28
26
24
22
20
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Gain, Power & Output IP3
vs. Supply Voltage @ 5 GHz, Fixed Vgg
GAIN (dB), P1dB (dBm), PSAT (dBm), IP3 (dBm)
36
34
32
30
28
26
24
22
20
18
16
14
7.5
8
Vdd SUPPLY VOLTAGE (V)
8.5
GAIN (dB)
P1dB (dBm)
PSAT (dBm)
IP3 (dBm)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-10
-20
-30
-40
-50
-60
-70
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25 C
+85 C
-55 C
3 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
292
290
288
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+9 Vdc
-2 to 0 Vdc
(Vdd -8) Vdc to Vdd
+16 dBm
175 °C
4.64 W
19.4 °C/W
-65 to +150 °C
-55 to +85 °C
3
LINEAR & POWER AMPLIFIERS - CHIP
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-1
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 43
HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
3
LINEAR & POWER AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
2
Vgg2
Gate Control 2 for amplifier. +3V should be applied to Vgg2
for nominal operation. Vgg2 may be adjusted between 0 to
+5V to temperature compensate gain.
4
RFOUT & Vdd
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
5
Vgg1
Gate Control 1 for amplifier. Adjust between -2 to 0V
to achieve Idd= 290 mA.
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit here in.
6
ACG2
Low frequency termination. Attach bypass capacitor per
application circuit here in.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
3 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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