HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Features
Noise Figure: 1.7 dB
Gain: 22 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3 mm SMT Package: 9 mm
2
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC758LP3(E) is ideal for:
• Cellular Infrastructure, WiMAX & LTE/4G
• Software Defined Radios
• Repeaters and Femtocells
• Access Points
• Test & Measurement Equipment
Functional Diagram
General Description
The HMC758LP3(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for Cellular Infrastructure,
WiMAX & LTE/4G basestation front-end receivers
operating between 700 and 2200 MHz. The amplifier
has been optimized to provide 1.7 dB noise figure,
21 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC758LP3(E) can
be biased with +3V to +5V and features an externally
adjustable supply current, which allows the designer
to tailor the linearity performance of the LNA for
each application.
Electrical Specifi cations,
T
A
= +25° C, R1= 390Ω, R2= 560Ω*
Vdd = +3V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
80
16
19
Typ.
700 - 1700
21.8
0.005
1.6
15
11
18
20
31
102
130
80
18
2.5
16
Max.
Min.
Typ.
Max.
Min.
Typ.
700 - 1700
20
22.7
0.004
1.8
1.7
14
10
20.5
22.5
23.5
36
130
190
227
260
190
22
2.6
18
Max.
Min.
Typ.
Max.
MHz
dB
dB/ °C
2.0
dB
dB
dB
dBm
dBm
dBm
260
mA
1700 - 2200
19.4
0.01
1.4
13
15
20
21.5
31.5
102
1700 - 2200
21.3
0.01
1.6
14
12
24
25
35
227
Vdd = +5V
Units
* R1 & R2 resistors set current, see application circuit herein
8 - 342
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
Vdd=5V
Vdd=3V
Gain vs. Temperature, Vdd = +5V
25
8
LOW NOISE AMPLIFIERS - SMT
23
GAIN (dB)
5
0
-5
-10
-15
-20
S11
S22
S21
21
+25C
+85C
-40C
19
17
-25
0
1
2
3
4
FREQUENCY (GHz)
5
6
15
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
Gain vs. Temperature, Vdd = +3V
25
Input Return Loss vs.
Temperature, Vdd = +5V
0
23
RETURN LOSS (dB)
-5
+25C
+85C
-40C
GAIN (dB)
21
+25C
+85C
-40C
-10
19
-15
17
15
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
-20
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
Output Return Loss vs.
Temperature, Vdd = +5V
0
Reverse Isolation vs.
Temperature, Vdd = +5V
0
-10
RETURN LOSS (dB)
-5
ISOLATION (dB)
+25C
+85C
-40C
-20
-30
-40
-50
+25C
+85C
-40C
-10
-15
-20
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
-60
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 34
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
8
LOW NOISE AMPLIFIERS - SMT
Noise Figure vs. Temperature
[1]
3
+85C
Output IP3 vs. Temperature
45
Vdd=5V
2.5
NOISE FIGURE (dB)
2
Vdd=5V
Vdd=3V
40
IP3 (dBm)
-40C
35
1.5
+25C
30
+25C
+85C
-40C
1
0.5
0
0.5
25
Vdd=3V
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
20
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
Output IP3 and Supply Current vs.
Supply Voltage @ 900 MHz
45
300
Output IP3 and Supply Current vs.
Supply Voltage @ 1900 MHz
45
300
40
IP3
250
40
IP3
250
IP3 (dBm)
IP3 (dBm)
35
200
Idd (mA)
35
200
Idd (mA)
30
150
30
150
25
Idd
100
25
Idd
100
20
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Voltage Supply (V)
50
5.5
20
2.7
50
3.1
3.5
3.9
4.3
4.7
Voltage Supply (V)
5.1
5.5
Output IP3 vs. Output Power @ 900 MHz
40
Output IP3 vs. Output Power @ 1900 MHz
36
35
34
38
IP3 (dBm)
36
Vdd=3V
Vdd=5V
IP3 (dBm)
33
32
Vdd=3V
Vdd=5V
34
32
31
30
-10
30
-10
-5
0
OUTPUT POWER (dBm)
5
10
-5
0
OUTPUT POWER (dBm)
5
10
[1] Measurement reference plane shown on evaluation PCB drawing.
8 - 344
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Power Compression @ 900 MHz
25
Pout (dBm), Gain (dB), PAE (%)
20
15
10
5
0
-5
-20
[1]
Power Compression @ 900 MHz
25
20
15
10
5
0
-5
-25
Pout
Gain
PAE
[2]
8
LOW NOISE AMPLIFIERS - SMT
Pout
Gain
PAE
-15
-10
-5
0
5
Pout (dBm), Gain (dB), PAE (%)
-20
-15
-10
-5
0
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression @ 1900 MHz
[1]
40
Pout (dBm), Gain (dB), PAE (%)
Pout
Gain
PAE
Power Compression @ 1900 MHz
[2]
40
Pout (dBm), Gain (dB), PAE (%)
Pout
Gain
PAE
30
30
20
20
10
10
0
0
-10
-20
-15
-10
-5
0
INPUT POWER (dBm)
5
10
-10
-20
-15
-10
-5
0
INPUT POWER (dBm)
5
10
Recommended Bias
Resistor Values for Idd
Vdd (V)
3V
3V
3V
5V
5V
5V
R1 (ohms)
390
1k
3.3k
390
1k
3.3k
R2 (ohms)
560
1.5k
4.7k
560
1.5k
4.7k
Idd (mA)
102
85
54
227
190
124
Typical Supply Current vs.
Vdd (R1 = 390Ω, R2 = 560Ω)
Vdd (V)
2.7
3
3.3
4.5
5
5.5
Idd (mA)
80
102
122
200
227
255
Absolute Min/Max Bias Resistor Range
Max
R1 (ohms)
3.9k
R2 (ohms)
5.6k
R1 (ohms)
270
Min
R2 (ohms)
470
Note: Amplifi er will operate over full voltage range shown above.
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 34
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
8
LOW NOISE AMPLIFIERS - SMT
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 20 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6 V
+5 dBm
150 °C
1.3 W
50 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC758LP3
HMC758LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
758
XXXX
758
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
8 - 346
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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